Nondestructive depth profiling by spectroscopic ellipsometry

Vedam, K.; McMarr, P.J.; Narayan, J.

doi:10.1063/1.96156

Cited by 133 publications

(20 citation statements)

References 8 publications

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“…This will enable us to have more insight into the nature of the structure of the film and obtaining the correct optical constants easily. Therefore, to model a layer that contains different constituents, Bruggemann effective medium approximation was used [26]. In another model, a parameterized formula for amorphous semiconductors had been constructed and used to fit the experimental data.…”

Section: Determination Of Optical Constants From Ellipsometric Measurmentioning

confidence: 99%

The Effect of Helium Dilution on Optical and Photoelectric Properties of a-Si: H Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition Technique

Badran

2011

Arab J Sci Eng

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The effect of Helium (He) dilution on optical and photoelectric properties of hydrogenated amorphous silicon (a-Si:H) thin film samples prepared at substrate temperature of 75 • C with increased growth rate by plasma-enhanced chemical vapor deposition (PECVD) technique is studied using spectrophotometric (SP) and steady-state photocarrier grating techniques (SSPG). The values of refractive index, absorption coefficient, thickness and optical energy gap, which are found from the analysis of transmission spectra using Swanepoel method, are compared with those obtained by employing variable-angle spectroscopic ellipsometry technique. The samples exhibit a tendency towards an increase in energy gap and a decrease in refractive index with the increase in He dilution. The obtained optical absorption coefficients of a-Si:H samples are compared with those of hydrogenated microcrystalline silicon (μc-Si:H) and crystalline silicon (c-Si) samples. It is also found that the change in He dilution has an influence on the ambipolar diffusion length, minority and majority mobility-lifetime products.

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Section: Determination Of Optical Constants From Ellipsometric Measurmentioning

confidence: 99%

The Effect of Helium Dilution on Optical and Photoelectric Properties of a-Si: H Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition Technique

Badran

2011

Arab J Sci Eng

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“…13,14 It is one of the most adapted measuring methods for characterization of all types of materials: dielectrics, semiconductors, metals, organics, and more. The instrument utilizes polarized light incident on the thin films and measures the amplitude and phase ͑angles ⌬ and ͒ changes between two orthogonal polarizations ͑p and s waves͒.…”

Section: Determination Of Thin Films' Propertiesmentioning

confidence: 99%

Effect of chemical bonds on the properties of SiN in thin film transistor liquid crystal display

Xie

Long

Deng

et al. 2007

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The hydrogenated amorphous silicon nitride (a-SiNx:H) thin films were produced in a radio-frequency plasma-enhanced chemical vapor deposition system using NH3∕SiH4∕N2 mixture source gases at 330°C. In this study the authors determine the structural properties of a-SiNx:H thin films with Fourier transform infrared measurement and relate these to both the processing parameters and their physical/optical properties. The Si–H and N–H bond densities are affected by the processing parameters. They find that the plasma power density and chamber pressure play minor roles compared to the gas flow rate of SiH4, and the role of the electrode spacing is indistinctive. The Si–H, N–H, and Si–N bond densities are important parameters affecting the physical/optical properties of low deposition rate thin film (the thin films in the proximity of a-SiNx:H∕a-Si interface) and high deposition rate (HDR) thin film (bottom gate insulator thin films). The optical band gap (E04) could be tuned by the N radical density. The N radical density increases with increasing N–H and Si–N bond densities and decreasing Si–H bond density. The Si–N bond density and the Si and N dangling bonds enhance the dielectric constant, but the Si–H and N–H bond densities have different effects. The dielectric constant increases with increasing Si–H bond density for the HDR thin films, because the high plasma power density (>38.5W∕cm2) could break more Si–N bonds. Finally, process parameters are obtained for optimized performance of the thin film transistors.

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“…However, recently with the introduction of microcomputers and computer interfaces, spectroscopic ellipsometry [4][5][6][7] has been established to be a very effective technique for the characterization of thin surface layers [8] with very high sensitivity and accuracy.…”

Section: Introductionmentioning

confidence: 99%

Ellipsometric analysis of ion-implanted polycrystalline silicon films before and after annealing

2006

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Nondestructive depth profiling by spectroscopic ellipsometry

Cited by 133 publications

References 8 publications

The Effect of Helium Dilution on Optical and Photoelectric Properties of a-Si: H Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition Technique

The Effect of Helium Dilution on Optical and Photoelectric Properties of a-Si: H Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition Technique

Effect of chemical bonds on the properties of SiN in thin film transistor liquid crystal display

Ellipsometric analysis of ion-implanted polycrystalline silicon films before and after annealing

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