The authors have studied transient photoinduced absorption in single monolayers of oxidized silicon nanocrystals. Transient photoinduced absorption measurements along with optical absorption and photoluminescence (PL) emission reveal that the light-absorption process takes place in defects related to strong PL emission, suggesting that the photoexcited carriers are in oxygen-related interface states. They have time-resolved ultrafast relaxation paths in oxygen-related states and quantized sublevels, which have important implications in the understanding of fundamental optical properties for this system.
In this work, we present the evolution of optical constants as a function of [6,6]-phenylC61-butyric acid methyl ester (PCBM) concentration for conjugated poly(3-hexylthiophene)/[6,6]-phenylC61-butyric acid methyl ester composites. The PCBM concentration of the utilized samples varies from 1to50wt%. The dielectric functions for all these composites reveal electronic structural changes as a result of the addition of PCBM. We have deconvoluted the contribution of the substrate using a two-layer Fabry-Pérot structural model. The extracted optical properties contain crucial absorption peaks of singlet exciton states and vibronic sidebands for poly(3-hexylthiophene) (P3HT) conjugated polymer as well as two PCBM-related states at higher energies. With the addition of PCBM, we have observed a limit of 20wt% PCBM beyond which two discrete energy levels (3.64 and 4.67eV) appear in the spectrum. For the highest concentration composite, the results suggest that the interchain interactions provide a small excitonic contribution in the absorption spectrum at energies where the conjugated polymer absorbs (1.85–2.7eV) and a strong rise of PCBM states (3.64 and 4.67eV) which are responsible for the subsequent exciton dissociation. In addition, the energy gap between the higher occupied molecular orbitals and the lower unoccupied molecular orbitals of the highest concentration composite (50wt%) is 1.85eV. The tuning of the optical properties of P3HT with the addition of PCBM shows that ellipsometry can be used to monitor layer concentration toward optimization of plastic solar cells.
Ultrafast carrier dynamics of ZnSe nanowires grown under different growth conditions have been studied. Transient absorption measurements reveal the dependence of the competing effects of state filling and photoinduced absorption on the probed energy states. The relaxation of the photogenerated carriers occupying defect states in the stoichiometric and Se-rich samples are single exponentials with time constants of 3–4ps. State filling is the main contribution for probe energies below 1.85eV in the Zn-rich grown sample. This ultrafast carrier dynamics study provides an important insight into the role that intrinsic point defects play in the observed photoluminescence from ZnSe nanowires.
We report on a spectroscopic study of very thin nanocrystalline silicon films varying between 5 and 30nm. The role of quantum confinement effect and surface passivation of nanograins in optical properties are examined in detail. The coupling between surface vibrations and fundamental gap Eg as well as the increase of interaction between them at the strong confinement regime (⩽2nm) are proposed for the observable pinning of Eg in luminescence measurements.
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