2014
DOI: 10.1016/j.materresbull.2014.04.002
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Non-toxic novel route synthesis and characterization of nanocrystalline ZnSxSe1−x thin films with tunable band gap characteristics

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Cited by 20 publications
(6 citation statements)
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“…For Zn-containing samples, the Zn-2p features were fitted with a spin–orbit doublet (p-type curve), arising from Zn-2p 3/2 and Zn-2p 1/2 (Δ spin–orbit splitting = 23.1 eV), located at binding energies (BEs) of 1022.20 eV and 1045.30 eV for 3F and 1022.08 eV and 1045.18 eV for 4F , proving the presence of Zn in its Zn 2+ oxidation state. 60,66 These data agree well with those reported for Zn-2p peaks from ZnS x Se 1− x films (with different x composition ( x = 0.4, 60 0.24, 67 0.6–1, 68 and x = 1, 0.75, 0.55, and 0.35 66 ) and ZnSe, 65,69,70 respectively. The modest higher energy of Zn-3p peaks in 3F , as well as their broadening (full width at half maximum, FWHM = 2.00 ( 3F ) and 1.79 ( 4F ) eV) could be attributed to the presence of more electronegative S atoms forming the ternary solid solution.…”
Section: Thin Filmssupporting
confidence: 90%
“…For Zn-containing samples, the Zn-2p features were fitted with a spin–orbit doublet (p-type curve), arising from Zn-2p 3/2 and Zn-2p 1/2 (Δ spin–orbit splitting = 23.1 eV), located at binding energies (BEs) of 1022.20 eV and 1045.30 eV for 3F and 1022.08 eV and 1045.18 eV for 4F , proving the presence of Zn in its Zn 2+ oxidation state. 60,66 These data agree well with those reported for Zn-2p peaks from ZnS x Se 1− x films (with different x composition ( x = 0.4, 60 0.24, 67 0.6–1, 68 and x = 1, 0.75, 0.55, and 0.35 66 ) and ZnSe, 65,69,70 respectively. The modest higher energy of Zn-3p peaks in 3F , as well as their broadening (full width at half maximum, FWHM = 2.00 ( 3F ) and 1.79 ( 4F ) eV) could be attributed to the presence of more electronegative S atoms forming the ternary solid solution.…”
Section: Thin Filmssupporting
confidence: 90%
“…Moreover, on considering the industrial production and environmental protection issues, the nanostructure ZnS1-xSex composite materials are the promising alternatives to the presently explored toxic materials such as CdS window layer in photovoltaic applications. Earlier, thin films of ZnS1-xSex have been prepared using atomic layer epitaxy (Hsu C., et al,1999), high pressure sputtering (Ganguly, S., et al,2001), metal organic vapor epitaxy (Lovergin, N., et al,2000), MOCVD (Song J. H., et al,2000), laser ablation (Ambrico A., et al,1998), close space evaporation, spray pyrolysis (Ganesha K.,2020), epitaxial growth Lee M. K., et al,2003), soft chemical route technique (Agawane G. L., et al,2014). Among the galore of thin film deposition techniques, soft chemical route technique is low cost, low temperature and no special instrumentation is required.…”
Section: Introductionmentioning
confidence: 99%
“…These studies mainly focused on Cd-based QDs, such as CdSe QDs, CdS QDs, CdS/ZnS QDs, CdSe/CdS core/shell QDs, and CdSe/ZnS/CdS/ZnS core/multishell QDs . However, due to the toxicity of Cd, the application of Cd-QDs and related devices is greatly limited, especially in the biological field. , On the other hand, the heterojunction structure can make full use of the different properties of the two materials constituting the heterojunction and has excellent properties, including strong quantum effect, large mobility, and peculiar two-dimensional space characteristics. It has been widely used in many different fields such as double-heterojunction ZnS/ZnSe/CdTe used in photovoltaic structure, transparent p-NiO/n-ZnO heterojunction applied in devices for ultraviolet photodetectors, and especially in heterojunction solar cells. , …”
Section: Introductionmentioning
confidence: 99%