Nanostructurred ZnS1-xSex (x =0.4) Thin Film Prepared by Chemical Bath Deposition for Solar cell applications

Abstract

Ternary nanostructurred zinc selenosulphide (ZnS0.6Se0.4) thin film was grown on glass substrate using chemical bath deposition technique employing ammonia free precursors at 80 °C. As deposited thin film exhibits nanostructurred polycrystalline nature confirmed by X-ray diffraction pattern (XRD). The optical band gap (Eg) was calculated from the observed transmittance spectra by Urbach method and found to be 3.29 eV. The optical and electrical properties' study revealed that ZnS0.6Se0.4 thin film is useful in optoelectronic device fabrication and applications, and as an environment friendly alternative to the commonly used toxic material such as CdS.