Effect of Preparation Parameters on Deep-Blue Light-Emitting Diodes Based on Nanostructured ZnSe/ZnS Multilayer Films

Ou, Kai; Bai, Li‐Yuan; Huang, Miaoling; Lü, Yi; Duan, Xiaoxia; Wang, Shenwei

doi:10.1021/acsomega.0c03071

Cited by 16 publications

(4 citation statements)

References 28 publications

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“…We have also explored electronic transitions, primarily involving Zn-d and Se-d orbitals in the valence band, and Zn-s and Indium-d orbitals in the Band gap (eV) 1.79 (x = 0%), 0.0 (x = 12.5%, 25%) $1.7-2.7 for ZnSe [2] Static dielectric constant 5.0 (x = 0%), 40.0 (x = 12.5%), 50.0 (x = 25%) $5.9 for ZnSe [31] Absorption edge (eV) 2.0 (x = 0%), 0.0 (x = 12.5%, 25%) $2.4 for ZnSe [1] Refractive index (static) 2.2 (x = 0%), 6.0 (x = 12.5%), 7.7 (x = 25%) $2.45 for ZnSe [6] Extinction coefficient peaks (eV) Peaks within 5.7-8.0 eV range $4.5-6.5 eV for ZnSe [7] Reflectivity (%) 16.0% (x = 0%), 59.0% (x = 12.5%), 62% (x = 25%) $15%-60% range for ZnSe [21] Energy loss peaks (eV) Plasmon oscillations around 10 eV, 9.9 eV, 9.8 eV $9-11 eV for ZnSe [18] conduction band for ZnSe 1Àx In x (x = 0%, 12.5%, 25%) materials. An in-depth discussion on the band structure in relation to optical properties is provided.…”

Section: Discussionmentioning

confidence: 99%

“…Zinc selenide (ZnSe), a semiconductor recognized for its band gap (E g = 2.56 eV) well-aligned with the solar energy spectrum, has attracted widespread attention. Its suitability for the production of photodetectors, various optoelectronic devices, solar cells, and light-emitting diodes (LEDs) has been extensively documented [1][2][3]. Furthermore, ZnSe is known to crystallize in two different structural forms: the cubic (zinc blende) and the hexagonal (wurtzite) phases, each contributing uniquely to its optoelectronic properties [4,5].…”

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confidence: 99%

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Insights into the DFT‐computed electronic and optical properties of binary and doped: Selenide for optoelectronic applications

Aamer,

Rafiq,

Hayat

et al. 2024

Int J of Quantum Chemistry

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This study investigates the alterations in structural, electronic, and optical characteristics of ZnSe1−x Inx (x = 0%, 12.5%, 25%) employing the framework of density functional theory (DFT), utilizing generalized gradient approximation (GGA) in conjunction with the full‐potential linearized augmented plane wave (FP‐LAPW) approach. The findings reveal that pure ZnSe exhibits a direct bandgap of 1.79 eV at the Γ point, which reduces to 0 eV upon doping with Indium, indicating a transition to metallic characteristics. This change is attributed to the predominant involvement of the d‐orbital of Zn, s‐orbital of Se, and p‐orbitals of Indium in the valence band of ZnSe1−x Inx materials. Conversely, the s‐orbital of Zn predominantly contributes to the conduction band of undoped ZnSe, whereas the d‐orbitals of Indium play a significant role in the conduction band of ZnSe1−x Inx (x = 0%, 12.5%, 25%). Moreover, the study computes other optical parameters, including reflectivity, electron energy loss spectrum, extinction coefficient, refractive index, and absorption coefficient, as functions of photon energy. A notable observation is the considerable rise in the zero‐frequency dielectric constant, ε1(0), which increases from 5.0 in pure ZnSe to 40.0 and 50.0 in Indium‐doped ZnSe, highlighting a significant alteration in electronic properties. Furthermore, optical analyses demonstrate an expansion in the absorption coefficient spectrum, which extends from photon energies of 2.0 eV in pristine ZnSe to begin at 0 eV in Indium‐doped variants, indicating a broadening of the material's capacity to absorb light across a wider spectrum of photon energies. This expansion infers improved light absorption potential, which could be particularly beneficial for the fabrication of light‐emitting modules and solar energy converters. These insights underline the considerable influence that Indium incorporation exerts on the band architecture and optical responses of ZnSe, offering critical directions for the advancement of optoelectronic devices.

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Section: Discussionmentioning

confidence: 99%

mentioning

confidence: 99%

Insights into the DFT‐computed electronic and optical properties of binary and doped: Selenide for optoelectronic applications

Aamer,

Rafiq,

Hayat

et al. 2024

Int J of Quantum Chemistry

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“…(iv) high refractive index and (v) high transparency in the visible range 5) . Zinc selenide has good quantum efficiency and more stability 6), 7) . ZnSe-based nano-structured materials represent promising substances for optoelectronic as well as photovoltaic devices 8),9) like blue lasers, thin semiconductors, photo detectors, and solar cells due to their characteristics 10),11) .…”

Section: Introductionmentioning

confidence: 99%

Impact of Annealing and Hydrogenation on the Optical Characteristics of ZnSe/Mn and ZnSe/Co DMS Thin Films Prepared via Thermal Evaporation Method

M.K.Jangid,

Sharma,

Ved Prakash Meena

et al. 2024

Evergreen

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This article reports that the annealing and hydrogenation effect on the transmission, reflection and bandgap of ZnSe/Mn and ZnSe/Co diluted magnetic semiconductors (DMS). The diluted magnetic semiconductor multilayers thin films of ZnSe/Mn and ZnSe/Co were physically deposited by thermal evaporation technique at 10 -5 torr vacuum pressure onto glass substrates. To achieve the inter-diffusion and homogeneous structures, the prepared samples were annealed at 473K for one hour in vacuum. Hydrogenation of annealed samples was done at pressure 20 and 30 psi H 2 to observe the effect of hydrogenation on optical properties of thin films. The transmission and reflection of the samples were recorded using UV-Vis. spectrophotometer in the visible range. It was observed that the transmittance as well as energy bandgap of the samples varies with annealing temperature and hydrogen pressure. The opposite impact of annealing and hydrogenation on optical properties of ZnSe/Mn and ZnSe/Co thin films were observed that is Mn and Co interlayer with ZnSe reverse the effect of hydrogenation. The reverse effect of hydrogenation creates new possibilities to use ZnSe/Mn and ZnSe/Co diluted magnetic semiconductors in the field of photovoltaics, energy storage, spintronics and sensors.

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“…The physical and chemical properties of wide band gap semiconductor zinc selenide (ZnSe) are still of interest due to its promising applications for high-performance optoelectronic devices. ZnSe with the band gap energy of about 2.7 eV at 300 K is a perspective material for light-emitting diodes (LED) [1][2][3], photodetectors [4], field emitters, elements of solar cells [5,6], and other areas. ZnSe is also used as γ-radiation semiconductor detectors [7] and X-ray detectors that operate in a wide temperature range up to 130°C [8].…”

Section: Introductionmentioning

confidence: 99%

Luminescence of Femtosecond Laser-Processed ZnSe Crystal

Dmitruk

Berezovska

Degoda

et al. 2021

Journal of Nanomaterials

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The ZnSe single crystal treatment in air environment with linearly polarized Ti/sapphire femtosecond (fs)laser pulses of the energy density of around 0.04-0.05 J/cm2 with central wavelength of 800 nm and the pulse duration of 140 fs at a repetition rate of 1 kHz generates the laser-induced periodic surface structures (LIPSSs). The setup with a cylindrical quartz lens at normal incidence allowed processing a relatively large area of the ZnSe sample in one pass of the laser beam. Morphology analysis of LIPSS by scanning electron microscopy (SEM) and image processing reveals the existence of two periods of around 200.0 nm and 630.0 nm simultaneously. All LIPSSs demonstrate the orientation perpendicular to the laser beam polarization. The possible nature of LIPSS formation on ZnSe single crystal is caused by the synergetic influence of the interference mechanism involving surface plasmon polaritons and hydrodynamic effects of surface morphology modification. The fs-laser-induced changes of carrier concentrations in ZnSe specify obtained periods of high spatial frequency LIPSS. The influence of femtosecond laser processing on luminescent properties of ZnSe single crystal has been studied by an analysis of the photoluminescence (PL) and X-ray luminescence (XRL) spectra of laser-treated and untreated areas in the visible region of spectrum at room and low temperatures. The PL spectra and XRL spectra, as well as temperature dependencies of XRL spectra or thermally stimulated luminescence curves, demonstrate a good correlation for untreated and fs-laser-treated ZnSe surfaces. Specific PL bands related to the extended structural defects do not appear for LIPSS at the ZnSe sample under an excitation of 337 nm (3.68 eV). The Relative intensities and position of separate components of observed luminescence bands after ultrashort laser treatment do not change significantly. Thus, the structural perfection of the ZnSe single crystal surface is preserved.

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Effect of Preparation Parameters on Deep-Blue Light-Emitting Diodes Based on Nanostructured ZnSe/ZnS Multilayer Films

Cited by 16 publications

References 28 publications

Insights into the DFT‐computed electronic and optical properties of binary and doped: Selenide for optoelectronic applications

Insights into the DFT‐computed electronic and optical properties of binary and doped: Selenide for optoelectronic applications

Impact of Annealing and Hydrogenation on the Optical Characteristics of ZnSe/Mn and ZnSe/Co DMS Thin Films Prepared via Thermal Evaporation Method

Luminescence of Femtosecond Laser-Processed ZnSe Crystal

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