Non-polar (11-20) GaN grown on sapphire with double overgrowth on micro-rod/stripe templates

Bai, J.; Jiu, L.; Gong, Y.; Wang, T.

doi:10.1088/1361-6641/aaed93

Cited by 6 publications

(9 citation statements)

References 26 publications

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“…The slope of the sapphire cones allowed for tilted nucleation of a-plane GaN similar to a-plane growth on r-plane sapphire [ 27 ]. The stacking faults indicated that GaN on the cone sidewalls presented a-plane orientation [ 28 , 29 , 30 , 31 ]. We observed that there were some semi-polar and non-polar planes in sample A, by our calculation from SAED patterns in Figure 7 b.…”

Section: Resultsmentioning

confidence: 99%

Comparative Research of GaN Growth Mechanisms on Patterned Sapphire Substrates with Sputtered AlON Nucleation Layers

Gao

Peng

et al. 2020

Materials

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The utilization of sputtered AlN nucleation layers (NLs) and patterned sapphire substrates (PSSs) could greatly improve GaN crystal quality. However, the growth mechanism of GaN on PSSs with sputtered AlN NLs has not been thoroughly understood. In this paper, we deposited AlON by sputtering AlN with O2, and we found that the variation of thickness of sputtered AlON NLs greatly influenced GaN growth on PSSs. (1) For 10 nm thin AlON sputtering, no AlON was detected on the cone sidewalls. Still, GaN nucleated preferably in non-(0001) orientation on these sidewalls. (2) If the thickness of the sputtered AlON NL was 25 nm, AlON formed on the cone sidewalls and flat regions, and some small GaN crystals formed near the bottom of the cones. (3) If the sputtered AlON was 40 nm, the migration ability of Ga atoms would be enhanced, and GaN nucleated at the top of the cones, which have more chances to grow and generate more dislocations. Finally, the GaN growth mechanisms on PSSs with sputtered AlON NLs of different thicknesses were proposed.

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Section: Resultsmentioning

confidence: 99%

Comparative Research of GaN Growth Mechanisms on Patterned Sapphire Substrates with Sputtered AlON Nucleation Layers

Gao

Peng

et al. 2020

Materials

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“…19 ), forming a mushroom configuration. The specially designed patterning can compensate for the intrinsically anisotropic in-plane growth rate of nonpolar GaN 23 . Consequently, the overgrowth on the template can achieve not only substantially improved crystal quality, but also an atomically flat surface as result of a quick coalescence.…”

Section: Methodsmentioning

confidence: 99%

Optical and polarization properties of nonpolar InGaN-based light-emitting diodes grown on micro-rod templates

Bai¹,

Jiu²,

Poyiatzis³

et al. 2019

Sci Rep

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We have demonstrated non-polar a -plane InGaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) on sapphire, achieved by overgrowing on a micro-rod template with substantially improved crystal quality. Photoluminescence measurements show one main emission peak at 418 nm along with another weak peak at 448 nm. Wavelength mapping measurements carried out by using a high spatial-resolution confocal PL system indicate that the two emissions origin from different areas associated with the underlying micro-rod patterns. Electroluminescence measurements exhibit a negligible blue-shift of 1.6 nm in the peak wavelength of the main emission when the driving current increases from 10 to 100 mA, indicating that the quantum confined Stark effect is effectively suppressed in in the nonpolar LED. A polarization ratio of 0.49 is obtained for the low-energy emission (~448 nm), while the main emission (~418 nm) shows a polarization ratio of 0.34. Furthermore, the polarization ratios are independent of injection current, while the energy separation between m-polarized and c-polarized lights increases with the injection current for both emissions.

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“…Therefore, selective growth using a mask is a good choice, which not only avoids the damage caused by etching, but also has the characteristics of orderly and controllable growth. [ 15–18 ] In this article, the InGaN/AlGaN MQW microrod array structure was grown using the microhole mask, and its structure and luminescence characteristics were analyzed.…”

Section: Introductionmentioning

confidence: 99%

Structure and Luminescence Properties of InGaN/AlGaN Multiquantum‐Well Microrod Array Structures

Peng

et al. 2022

Physica Status Solidi (a)

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The InGaN/AlGaN multiquantum‐well microrod‐array structure is grown on c‐plane GaN template with SiO2 microholes patterned as a mask. The surface morphology exhibits the accurately ordered microrod‐array structure. Temperature‐dependent photoluminescence (PL) measurement indicates that the PL peaks redshift as the temperature increases. Room‐temperature PL and cathode luminescence spectra show that the different positions on InGaN/AlGaN microrod arrays have different luminous peaks. The successful fabrication of InGaN/AlGaN microrod arrays is of great significance for the realization of multicolor emission and the design of new optoelectronic devices.

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Non-polar (11-20) GaN grown on sapphire with double overgrowth on micro-rod/stripe templates

Abstract: This is a repository copy of Non-polar (11-20) GaN grown on sapphire with double overgrowth on micro-rod/stripe templates.

Cited by 6 publications

References 26 publications

Comparative Research of GaN Growth Mechanisms on Patterned Sapphire Substrates with Sputtered AlON Nucleation Layers

Comparative Research of GaN Growth Mechanisms on Patterned Sapphire Substrates with Sputtered AlON Nucleation Layers

Optical and polarization properties of nonpolar InGaN-based light-emitting diodes grown on micro-rod templates

Structure and Luminescence Properties of InGaN/AlGaN Multiquantum‐Well Microrod Array Structures

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