Structure and Luminescence Properties of InGaN/AlGaN Multiquantum‐Well Microrod Array Structures

Abstract

The InGaN/AlGaN multiquantum‐well microrod‐array structure is grown on c‐plane GaN template with SiO2 microholes patterned as a mask. The surface morphology exhibits the accurately ordered microrod‐array structure. Temperature‐dependent photoluminescence (PL) measurement indicates that the PL peaks redshift as the temperature increases. Room‐temperature PL and cathode luminescence spectra show that the different positions on InGaN/AlGaN microrod arrays have different luminous peaks. The successful fabrication of InGaN/AlGaN microrod arrays is of great significance for the realization of multicolor emission and the design of new optoelectronic devices.