Non-Intrusive Methodologies for Characterization of Bias Temperature Instability in SiC Power MOSFETs

Abstract

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Bias Temperature Instability and Junction Temperature Measurement Using Electrical Parameters in SiC Power MOSFETs

“…33 is that for a known temperature T, the shift of VSD can be used as a cursor of BTI degradation. A novel methodology using this relationship was evaluated in [41,58,68], where it was shown that it is able to capture the peak shift of VTH and subsequent recovery after stress removal.…”

Unipolar and Bipolar Pulsed Gate Stresses and Threshold Voltage Shifts in GaN e-HEMTs

“…Threshold voltage (VTH) shift in GaN HEMTs is more complicated than that in traditional silicon and SiC devices with traditional MOS interfaces. This is due to the fact that devices with MOS gates do not have hetero-junctions, hence, threshold voltage shift is due to charge trapping in the gate dielectric and in the semiconductor-to-dielectric interface [1][2][3][4]. Hence, positive gate voltage (VGS) stress in MOS gates results in negative charge trapping and positive VTH shifting.…”