Non-equilibrium thermodynamics and the vapor phase preparation of diamond for electronic applications

Modeling of substrate surface temperature distribution during hot-filament assisted diamond deposition

“…At these velocities it takes approximately 3 seconds for the various species generated at or near the filament surface to travel from the filament to the substrate placed 3 mm away. Since the time constants for the loss of some of the important species such as CH 3 and H are of the order of a millisecond, the species generated at the filament cannot be tran- convection is unimportant in determining the temperature distribution and that conduction is the primary factor in establishing the temperature field. The ratio of the convective heat transport to conductive heat transport, the Peclet number for heat transfer, is given by puLCp/k.…”

“…2 Synthesis of good quality-defect free diamond films for potential optical and electronic applications is being pursued. 3 Furthermore, significant progress is being made in understanding the growth mechanism 4 - 6 and the formation of defectsr -8 such as twins, dislocations, stacking faults, second phase inclusions and interstitial hydrogen. Essentially single phase diamond films can be deposited from hydrocarbon-hydrogen mixtures over a narrow range of substrate temperatures 9 with significant co-deposition of amorphous carbon at lower temperatures, and formation of non-diamond components including micro-crystalline graphite at higher temperatures.1 0 The incorporation of defects in the diamond lattice is believed to originate from the differences in the relative rates of addition and incorporation of carbon atoms during film growth.…”