Noise modeling for RF CMOS circuit simulation

Abstract

The RF noise in 0.18-m CMOS technology has been measured and modeled. In contrast to some other groups, we find only a moderate enhancement of the drain current noise for shortchannel MOSFETs. The gate current noise on the other hand is more significantly enhanced, which is explained by the effects of the gate resistance. The experimental results are modeled with a nonquasi-static RF model, based on channel segmentation, which is capable of predicting both drain and gate current noise accurately. Experimental evidence is shown for two additional noise mechanisms: 1) avalanche noise associated with the avalanche current from drain to bulk and 2) shot noise in the direct-tunneling gate leakage current. Additionally, we show low-frequency noise measurements, which strongly point toward an explanation of the 1 noise based on carrier trapping, not only in n-channel MOSFETs, but also in p-channel MOSFETs.

Thermal Noise in Modern CMOS Technology

“…They believed that as Chen and Deens' model does not consider the carrier heating, the effect of mobility reduction gets largely compensated. They also believed that this is why Scholten et al (Scholten et al, 2003) were able to match the experimental result without considering carrier heating. Jeon et al also reported that the hot-carrier effect should be taken into account when modeling their 0.13 μm transistors (Jeon et al, 2007).…”

“…The induced gate noise can be naturally generated by using the segmentation method as presented in Scholten's paper (Scholten et al, 2003). However, the disadvantage of this approach is that it increases the number of transistors and therefore the simulation complexity, especially for the distortion analysis.…”

Ultra‐Low‐Noise Seismic Accelerometers for Earthquake Prediction and Monitoring

“…(11), Γ is a constant, for most FETs, Γ ≈ 2/3 [27]. g fs is the FET forward transconductance and α is 1/f parameter used as a figure of merit for the FET 1/f noise.…”

A Small-Signal Analysis Based Thermal Noise Modeling Method for Rf Soi Mosfets

“…It is prerequisite for the application of modern SOI technologies in RF circuits to better understand noise mechanisms [2][3][4][5]. For the applications in low noise CMOS RF circuits such as low noise amplifier (LNA), accurate modeling of noise is quite important.…”

“…In the past decade, HF noise characterization and modeling for bulk and floating body SOI MOSFETs has been widely studied [6][7][8][9][10][11][12][13][14][15], and some modeling methods have been proposed. In [16], the authors proposed a channel segmentation model for accurate channel noise by several independent MOS model. In [17], the author presented a physical understanding of both intrinsic and extrinsic noise mechanisms in a MOSFET [18], a simple analytical model for the thermal channel noise of deep-submicron MOS transistors including hot carrier effects.…”