A Small-Signal Analysis Based Thermal Noise Modeling Method for Rf Soi Mosfets

Abstract

Abstract-We investigate thermal noise mechanisms and present analytical expressions of the noise power spectral density at high frequencies (HF) in Silicon-on-insulator (SOI) MOSFETs. The developed HF noise model of RF T-gate body contact (TB) SOI MOSFET for 0.13-µm SOI CMOS technology accounts for the mechanisms of 1) channel thermal noise; 2) induced gate noise; 3) substrate resistance noise and 4) gate resistance thermal noise. The extraction method of modeling parameter utilized by Y -parameter analysis on the proposed small-signal equivalent circuit is demonstrated in this paper. Excellent agreement between simulated and measured noise data is obtained at different temperatures.