Noise-Margin Analysis for Organic Thin-Film Complementary Technology

Bode, Dieter; Rolin, Cédric; Schols, Sarah; Debucquoy, Maarten; Steudel, Soeren; Gelinck, Gerwin H.; Genoe, Jan; Heremans, Paul

doi:10.1109/ted.2009.2035546

Cited by 58 publications

(34 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The main disadvantages of unipolar logic gates over complementary logic gates are reduced robustness 30 and increased area and power consumption. Diode-load logic operates much faster than zero-V GS -load logic but suffers from a low gain and reduced noise margin, and therefore lower overall robustness 31 .…”

Section: Digital Logic Gatesmentioning

confidence: 99%

The development of flexible integrated circuits based on thin-film transistors

2018

View full text Add to dashboard Cite

T hin-film transistors (TFTs) are currently the dominant technology for in-pixel switches and drivers in flat-panel displays. Trends in consumer electronics demand ever-higher display resolution and brightness, lower power consumption, and new features and form factors (such as curved and foldable displays). This drives TFT devices to deliver more complex functions than simply switching. For example, recent bezel-less displays delegate the task of row selection to TFT circuits integrated next to the pixel array. Such driver circuits comprise thousands of switches operating together -previously a job for silicon chips mounted around the display.Beyond displays, how far can thin-film circuits go in terms of replacing silicon complementary metal-oxide-semiconductor (CMOS) chips? Fig. 1 illustrates the key advantages of thin-film circuits on flexible substrates. The circuits can be fabricated on large substrates, thereby creating very thin, lightweight and ultra-flexible electronics 1,2 . Folding, rolling or crumpling such flexible circuits is possible without destroying the electronic functionality. Because of these properties, a flexible TFT-based microprocessor 3 (Fig. 1d) or thin-film near-field communication (NFC) tag (Fig. 1e) can, for example, be integrated imperceptibly into any object. TFT technologies also have considerable potential for fabrication on ultrathin stretchable substrates 4 that can be made porous to create breathable devices for contact with skin. With these features, thin-film integrated circuits (ICs) could be a game-changer for wearable electronics. Ultrathin, conformable ICs in the form of a tattoo could be used to monitor vital body parameters, communicating these parameters directly to a patient's smartphone or a medical database.In this Perspective, I discuss the potential of thin-film circuits on plastic substrates for the development of Internet of Things (IoT) and wearable applications. First I look at the different TFT technologies that can be realized on flexible substrates, and then discuss the impact TFT technology will have on circuit design at the level of digital logic gates and very-large-scale integration (VLSI) digital circuits. For the latter, I consider the use of thin-film ICs in the creation of low-cost radiofrequency identification (RFID) tags for everyday items. Flexible chips may initially be used to simply identify each item. Then, when the RFID chip is potentially replaced with a thinfilm NFC chip, standard smartphones and tablets equipped with NFC readers could identify objects and connect them to the cloud. Another advantage of thin-film IC technology is its potential to be combined with sensor or signage technology, thereby integrating more functionality into the objects, which is discussed in a section on analogue circuits. Finally, I will briefly examine the potential of silicon CMOS chip technology to be interfaced directly with TFT circuitry. TFT technologyThe development and optimization of transistor technologies are driven by four important figures of me...

show abstract

Section: Digital Logic Gatesmentioning

confidence: 99%

The development of flexible integrated circuits based on thin-film transistors

2018

View full text Add to dashboard Cite

show abstract

“…To design and construct complex circuits and systems, the complementary type is a preferred choice for its low static power, rail-to-rail operation, and large noise margin [139]. However, it is difficult to find n-and p-type semiconductor materials with equivalent performance and compatible processes that would allow easy fabrication of high-performance complementary circuits.…”

Section: Device Modeling and Circuit Designmentioning

confidence: 99%

Current Status and Opportunities of Organic Thin-Film Transistor Technologies

Guo

Ogier³

et al. 2017

IEEE Trans. Electron Devices

235

162

View full text Add to dashboard Cite

-Attributed to its advantages of super mechanical flexibility, very low-temperature processing, and compatibility with low cost and high throughput manufacturing, organic thin-film transistor (OTFT) technology is able to bring electrical, mechanical, and industrial benefits to a wide range of new applications by activating nonflat surfaces with flexible displays, sensors, and other electronic functions. Despite both strong application demand and these significant technological advances, there is still a gap to be filled for OTFT technology to be widely commercially adopted. This paper provides a comprehensive review of the current status of OTFT technologies ranging from material, device, process, and integration, to design and system applications, and clarifies the real challenges behind to be addressed.

show abstract

“…This has been driven by scientific interest [1,2] and the potential applications of OFETs in new technologies such as flexible displays [3,4], logic circuits [5][6][7], radio frequency identification (RFID) tags [8,9], electronic paper [10,11] and sensing [12][13][14]. Organic compound-based devices offer interesting advantages over their inorganic counterparts in terms of their cost-effective deposition using low-energy vapour and solution phase methods that are suitable for large-area coverage on both solid and flexible substrates [15][16][17].…”

Section: Introductionmentioning

confidence: 99%

High-mobility solution-processed copper phthalocyanine-based organic field-effect transistors

Chaure

Cammidge

Chambrier

et al. 2011

Science and Technology of Advanced Materials

View full text Add to dashboard Cite

Solution-processed films of 1,4,8,11,15,18,22,25-octakis(hexyl) copper phthalocyanine (CuPc 6 ) were utilized as an active semiconducting layer in the fabrication of organic field-effect transistors (OFETs) in the bottom-gate configurations using chemical vapour deposited silicon dioxide (SiO 2 ) as gate dielectrics. The surface treatment of the gate dielectric with a self-assembled monolayer of octadecyltrichlorosilane (OTS) resulted in values of 4 × 10 −2 cm 2 V −1 s −1 and 10 6 for saturation mobility and on/off current ratio, respectively. This improvement was accompanied by a shift in the threshold voltage from 3 V for untreated devices to −2 V for OTS treated devices. The trap density at the interface between the gate dielectric and semiconductor decreased by about one order of magnitude after the surface treatment. The transistors with the OTS treated gate dielectrics were more stable over a 30-day period in air than untreated ones.

show abstract

Noise-Margin Analysis for Organic Thin-Film Complementary Technology

Cited by 58 publications

References 27 publications

The development of flexible integrated circuits based on thin-film transistors

The development of flexible integrated circuits based on thin-film transistors

Current Status and Opportunities of Organic Thin-Film Transistor Technologies

High-mobility solution-processed copper phthalocyanine-based organic field-effect transistors

Contact Info

Product

Resources

About