High-mobility solution-processed copper phthalocyanine-based organic field-effect transistors

Chaure, Nandu B.; Cammidge, Andrew N.; Chambrier, Isabelle; Cook, Michael J.; Cain, Markys G.; Murphy, Craig E.; Pal, Chandana; Ray, Asim K.

doi:10.1088/1468-6996/12/2/025001

Cited by 31 publications

(30 citation statements)

References 48 publications

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“…The value of C i for the OTS treated SiO 2 gate insulator was taken to be 1 Â 10 À4 F m À2 . 13 As expected, values of m GB0 remain virtually the same for the films which were annealed at a temperature # 100 C. However, an order of magnitude decrease was observed for m GB0 as a result of C to 10 7 for annealing at 100 C (shown in Table 3). The density N SS of traps at the interface between the organic layer and the gate SiO 2 dielectrics is related to the subthreshold voltage swing S in the form:…”

Section: Otft Characteristicssupporting

confidence: 72%

A liquid crystalline copper phthalocyanine derivative for high performance organic thin film transistors

et al. 2012

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Bottom-gate, bottom-contact organic thin film transistors (OTFTs) were fabricated using solvent soluble copper 1,4,8,11,15,18,22,25-octakis(hexyl)phthalocyanine as the active semiconductor layer. The compound was deposited as 70 nm thick spin-coated films onto gold source-drain electrodes supported on octadecyltrichlorosilane treated 250 nm thick SiO 2 gate insulators. The performance of the OTFTs was optimised by investigating the effects of vacuum annealing of the films at temperatures between 50C and 200 C, a range that included the thermotropic mesophase of the bulk material. These effects were monitored by ultraviolet-visible absorption spectroscopy, atomic force microscopy and XRD measurements. Device performance was shown to be dependent upon the annealing temperature due to structural changes of the film. Devices heat treated at 100 C under vacuum ($10 À7 mbar) were found to exhibit the highest field-effect mobility, 0.7 cm 2 V À1 s À1 , with an on-off current modulation ratio of $10 7 , a reduced threshold voltage of 2.0 V and a sub-threshold swing of 1.11 V per decade.

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Section: Otft Characteristicssupporting

confidence: 72%

A liquid crystalline copper phthalocyanine derivative for high performance organic thin film transistors

et al. 2012

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Section: Methodsmentioning

confidence: 99%

“…• C. 21 Spin-coated films of the two macrocyclic compounds, i.e 6NiTBTAP and 6NiPc were used as the active semiconductor layer on source-drain electrodes of photolithographically pre-patterned 200 nm thick titanium/gold in an interdigitated configuration with channel length L = 5 μm and channel width W = 2 mm. For spin coating, the compounds were dissolved in high purity chloroform (5 mg/1 mL) to prepare a spreading solution and a small volume of the resulting solution was then spin-coated initially at 1000 rpm for 20 secs and finally at 4000 rpm for 60 secs.…”

Section: Methodsmentioning

confidence: 99%

“…Prior to the device fabrication, the substrates were cleaned thoroughly in acetone, iso-propanol and finally in deionized water. For passivation of dangling bonds and interfacial traps, deposition of an OTS self-assembled monolayer onto the substrate was undertaken using OTS dissolved in anhydrous toluene above 50• C. 21 Spin-coated films of the two macrocyclic compounds, i.e 6NiTBTAP and 6NiPc were used as the active semiconductor layer on source-drain electrodes of photolithographically pre-patterned …”

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confidence: 99%

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A Tetrabenzotriazaporphyrin Based Organic Thin Film Transistor: Comparison with a Device of the Phthalocyanine Analogue

Chaure

Cammidge

Chambrier

et al. 2015

ECS J. Solid State Sci. Technol.

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The characteristics of bottom-gate bottom-contact organic thin film field-effect transistors (OTFTs) with 70 nm thick films of solution processed non-peripherally octahexyl-substituted nickel tetrabenzo triazaporphyrin (6NiTBTAP) molecules as active layers on silicon substrates are experimentally studied and the results are compared with the similary configured transistors using the corresponding nickel phthalocyanine (6NiPc) compound. 6NiTBTAP transistors are found to exhibit improved performance over 6NiPc transistors in terms of greater saturation hole mobility, two orders of magnitude higher on/off ratio and lower threshold voltage. This enhanced performance of 6NiTBTAP OTFTs over 6NiPc devices is attributed to improved surface morphology and large grain size of the active 6NiTBTAP film. Recent years have seen immense research activities in the development of high performance organic thin film field-effect transistors (OTFTs) with emphasis on low cost deposition of materials with novel characteristics over large areas on both solid and flexible substrates for multiple applications including displays, large-volume microelectronics, and biological and environmental sensors.1-3 High on-off ratio in the order of 10 7 , threshold voltage as low as 1 V and field effect hole mobility of approximately 1.21 cm 2 V −1 s −1 are reported for OTFTs using thin films of small molecules such as pentacene, 4 porphyrazine, 5 rubrene, 6 and thiophene 7,8 derivatives with suitably selected gate dielectrics. Among these small molecules, phthalocyanines (Pc) which constitute a class of macrocyclic compounds with a remarkable range of optical, optoelectronic and electrical properties are well-recognized for their chemical and thermal stability and UV-resistance. Their potential as organic semiconductors has been extensively pursued for the employment of vacuum deposited active layers in OTFTs.9 Of particular interest, however, are those low molecular weight Pc derivatives that bear substituent groups that confer solubility in common organic spreading solvents and columnar liquid crystal behavior typically at elevated temperatures.10,11 Time of flight measurements have reported remarkably high hole mobilities of 1.4 cm 2 V −1 s −1 for substituted metal free phthalocyanine compounds, when in their liquid crystal phases.12-14 Transistor experiments on films of a copper metallated derivative bearing eight hexyl chains at non-peripheral sites, 6CuPc Figure 1, demonstrated the importance of the annealing temperature in optimising the electrical behavior, leading in particular to field effect hole mobilities of the order of 0.7 cm 2 V −1 s −1 for the films annealed at 100• C. 15 The solution processing for formulation of molecules into thin films is suitable for roll-to-roll deposition onto large area substrates both solid and flexible. 16 In this paper, bottom-gate, bottom-contact organic thin film field effect transistors have been prepared on the highly doped silicon (110) gate electrode substrates using solution processed thin films ...

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“…Organic materials that are useful for these techniques are generally aromatic compounds [3], [4]. Our particular research utilizes metallated phthalocyanines that bear eight aliphatic chains that promote solubility in spreading solutions used for thin film formulations [5], and more recent advancement is the synthesis of closely related tetrabenzotriazaporphyrins (TBTAPs) molecules. These compounds differ from phthalocyanines in that one of the central ring nitrogen atoms is replaced by a carbon atom [6].…”

Section: Introductionmentioning

confidence: 99%

Compact Modeling of Organic Thin-Film Transistors with Solution Processed Octadecyl Substituted Tetrabenzotriazaporphyrin as an Active Layer

Jiménez-Tejada

López-Varo

Cammidge

et al. 2017

IEEE Trans. Electron Devices

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High-mobility solution-processed copper phthalocyanine-based organic field-effect transistors

Cited by 31 publications

References 48 publications

A liquid crystalline copper phthalocyanine derivative for high performance organic thin film transistors

A liquid crystalline copper phthalocyanine derivative for high performance organic thin film transistors

A Tetrabenzotriazaporphyrin Based Organic Thin Film Transistor: Comparison with a Device of the Phthalocyanine Analogue

Compact Modeling of Organic Thin-Film Transistors with Solution Processed Octadecyl Substituted Tetrabenzotriazaporphyrin as an Active Layer

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