1977
DOI: 10.1109/jssc.1977.1050947
|View full text |Cite
|
Sign up to set email alerts
|

Noise-induced error rate as limiting factory for energy per operation in digital ICs

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

2
21
0
8

Year Published

1978
1978
2010
2010

Publication Types

Select...
4
3
1

Relationship

0
8

Authors

Journals

citations
Cited by 46 publications
(31 citation statements)
references
References 7 publications
2
21
0
8
Order By: Relevance
“…We consider a contamination error when there is a misleading of the logic level, this means that the "1" voltage level crosses down the half power supply level threshold (1 is understood as 0) or that the "0" voltage level crosses up the half power supply level threshold (0 is understood as 1). The probability of (through VDD and GND) of contamination noise errors are given by: Similar reasoning for the level contamination error and probability calculation can be found in [11] and [12]. Figure 5 shows the representation of equation (4) for different levels of noise amplitude (typical deviation) relative to VDD, σ vdd /V DD .…”
Section: Logic Level Contamination Errormentioning
confidence: 81%
“…We consider a contamination error when there is a misleading of the logic level, this means that the "1" voltage level crosses down the half power supply level threshold (1 is understood as 0) or that the "0" voltage level crosses up the half power supply level threshold (0 is understood as 1). The probability of (through VDD and GND) of contamination noise errors are given by: Similar reasoning for the level contamination error and probability calculation can be found in [11] and [12]. Figure 5 shows the representation of equation (4) for different levels of noise amplitude (typical deviation) relative to VDD, σ vdd /V DD .…”
Section: Logic Level Contamination Errormentioning
confidence: 81%
“…For a small 1 1F capacitor, the rms noise level is roughly 2 mV. However, because of a trend of larger interconnect capacitances, large digital buffers, and higher operating temperatures due to transistor density, thermal noise has been shown to increase to 200 mV in even nanoscale digital circuits [5]. In lowpower digital logic, a supply voltage in the hundreds of mV is not unreasonable especially in subthreshold logic and hence the probability of an error becomes exceedingly likely in this case [3].…”
Section: Mosfet Implementation and Device Propertiesmentioning
confidence: 99%
“…Indeed a fundamental limit to voltage scaling technology has been proposed: the thermodynamic limit of these devices [4]. When the supply voltage becomes comparable to thermal noise levels in these types of ultra-low power designs, devices start to behave probabilistically giving an incorrect output with some nonzero probability [4,5]. Kish predicts that the thermal noise phenomenon will result in the "death" of Moore's law [6].…”
Section: Introductionmentioning
confidence: 99%
“…In the case of digital circuits this voltage fluctuation causes a fluctuation in the propagation delay that is a cause of performance degradation. This could imply an error probability of 10 -14 in every atomic processing cycle in the year 2020, according to [16]. New design strategies towards the reduction of transitions and even the implementation of clock-less circuits (asynchronous) are being developed.…”
Section: Low Voltage Designmentioning
confidence: 99%
“…In [16], the error rate caused by thermal noise for a given energy operation was investigated. Figure 5 shows this relation, taken from [16], and the vertical arrow indicates the energy corresponding to the CMOS technology in 2020. This implies an error rate of 10 -28…”
Section: Thermal Noise Impactmentioning
confidence: 99%