2011
DOI: 10.1201/b10602-14
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Noise in Semiconductor Devices

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Cited by 14 publications
(10 citation statements)
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“…Random Dopant Fluctuation and Line-Edge/Width Roughness are important sources of variability for CMOS devices [5]. White thermal noise and 1/f noise affect the CMOS channel current [4]. Interconnect is affected by Line-Edge/Width Roughness and white thermal noise too.…”
Section: Variability and Noisementioning
confidence: 99%
“…Random Dopant Fluctuation and Line-Edge/Width Roughness are important sources of variability for CMOS devices [5]. White thermal noise and 1/f noise affect the CMOS channel current [4]. Interconnect is affected by Line-Edge/Width Roughness and white thermal noise too.…”
Section: Variability and Noisementioning
confidence: 99%
“…Random Dopant Fluctuation and Line-Edge/Width Roughness are important sources of variability for CMOS devices [7]. White thermal noise and 1/f noise affect the CMOS channel current [6]. Interconnect is affected by Line-Edge/Width Roughness and white thermal noise too.…”
Section: Variability and Noisementioning
confidence: 99%
“…The main responsible is noise in CMOS transistors (and interconnect), to be considered as a random time-dependent phenomenon [5]. Its presence is unavoidable.…”
Section: Puf Imperfectionsmentioning
confidence: 99%