Noise behavior of amorphous GexSi1−xOy for microbolometer applications

Ahmed, Aftab; Tait, R. Niall

doi:10.1016/j.infrared.2004.11.003

Cited by 35 publications

(6 citation statements)

References 17 publications

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“…Un-cooled micro-bolometers are already used for the infrared (IR) spectral region ( [5][6][7][8] and references therein) and for the detection and imaging at the terahertz frequency range [9][10][11][12][13]. Different materials, such as metals, amorphous, polycrystalline and crystalline semiconductors, vanadium oxide, and high temperature super-conductors are used as the thermo-sensing layer.…”

Section: Introductionmentioning

confidence: 99%

SixGey:H-based micro-bolometers studied in the terahertz frequency range

Kosarev

Rumyantsev

Moreno

et al. 2010

Solid-State Electronics

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Section: Introductionmentioning

confidence: 99%

SixGey:H-based micro-bolometers studied in the terahertz frequency range

Kosarev

Rumyantsev

Moreno

et al. 2010

Solid-State Electronics

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“…Although there are many materials commonly used in microbolometer fabrication -Titanium (Ti) [9], Vanadium Oxide (VO) [10], Yttrium barium copper oxide (YBaCuO, YBCO) [11], GeSiO [12], poly SiGe [13], BiLaSrMnO and others -the most attractive among them are semiconductor (amorphous silicon Į-Si, poly-Si, Si-Ge) [4], because they have a higher temperature coefficient of resistance (TCR) than other materials.…”

Section: A Materials Propertiesmentioning

confidence: 99%

A study on microbolometer electro-thermal circuit modelling

Nazdrowicz

Szermer

Maj

et al. 2015

2015 22nd International Conference Mixed Design of Integrated Circuits &Amp; Systems (MIXDES)

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Electro-thermal models are commonly used in simulations and designing MEMS devices, also in case of microbolometers. These models allow to estimate sensors performance before fabrication that consequently impacts on fabrication cost. Coupling of electric and thermal domains and building appropriate model for carrying out simulations are crucial to detect all phenomena having impact for Readout Integrated Circuit. This article brings closer to the subject matter of circuit modelling (willingly implemented in MATLAB/SIMULINK or PSPICE tools) and to its theoretical background.

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“…Amorphous GCxSii-xOy, a compound of conventional semiconductors, is an attractive sensing material for microbolometer with high temperature coefficient of resistance and simple deposition technique, although the presence of high 1/f-noise was found to be an issue that hmits the microbolometer performance [4,5].…”

Section: Introductionmentioning

confidence: 99%

Noise Sources of a-Si[sub 1−x]Ge[sub x]O[sub y] Microbolometers And Their Reduction By Forming Gas Passivation

Rana¹,

Butler²,

Macucci³

et al. 2009

AIP Conference Proceedings

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Forming gas annealing was performed on Sii.xGe^Oy microbolometers in order to reduce the electrical 1//^noise. The passivation time and temperature were optimized to obtain least possible noise voltage power spectral density (PSD). To observe the effect of forming gas annealing at different intervals of time on the noise voltage PSD of the devices, the noise voltage PSD was measured before and at the end of each interval of passivation time by tracking individual devices. The microbolometers fabricated from Sii.xGe^Oy were placed inside a rapid thermal annealing chamber in the presence of forming gas at 250 °C with different intervals of time starting from 0.5 hour to 8 hours. The value of flicker noise coefficient . STj, or an/N from the Hooge model was used as a measure of electrical l//^noise. The l//^noise is believed to originate from the defects and dangling bonds in the sensing layer. The hydrogen passivation reduces the electrical l//^noise by repairing the dangling bonds and defects. Passivation done for excess time increased the electrical l//^noise of the device slightly, indicating that the dangling bonds contribute to trap states and scattering centers for the carriers.

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Noise behavior of amorphous GexSi1−xOy for microbolometer applications

Cited by 35 publications

References 17 publications

SixGey:H-based micro-bolometers studied in the terahertz frequency range

SixGey:H-based micro-bolometers studied in the terahertz frequency range

A study on microbolometer electro-thermal circuit modelling

Noise Sources of a-Si[sub 1−x]Ge[sub x]O[sub y] Microbolometers And Their Reduction By Forming Gas Passivation

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