2010
DOI: 10.1016/j.sse.2009.12.032
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SixGey:H-based micro-bolometers studied in the terahertz frequency range

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Cited by 17 publications
(5 citation statements)
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References 14 publications
(14 reference statements)
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“…The graphene layer absorbs THz radiation, and the GNR array acts as a barrier area. The computational analysis validates that the voltage response of this structure’s bolometer can reach , indicating that it has superior performance parameters compared to the bolometers discussed previously [ 28 ]. This work provides a theoretical basis for the fabrication of a graphene bolometer.…”
Section: Classification Of Graphene Terahertz Detectorssupporting
confidence: 70%
“…The graphene layer absorbs THz radiation, and the GNR array acts as a barrier area. The computational analysis validates that the voltage response of this structure’s bolometer can reach , indicating that it has superior performance parameters compared to the bolometers discussed previously [ 28 ]. This work provides a theoretical basis for the fabrication of a graphene bolometer.…”
Section: Classification Of Graphene Terahertz Detectorssupporting
confidence: 70%
“…This performance is 110 times the photo-detection sensitivity of the pristine CNT-film-based PTE sensor: parallel channel–electrode coupling structure with a device width of 1 mm ( Figure 3 k: transmissive XY scanning of a concealed metallic clip under FIR irradiation with a single-pixel device). The obtained photo-detection sensitivity is also comparable with that of cutting-edge solid-state photo-detectors, such as the bolometer [ 45 , 46 ] and Schottky barrier diodes [ 47 ]. The obtained 110-times photo-detection sensitivity enhancement involves six factors: series channel–electrode coupling, employing Bi, electrode length optimization, conformal coating of the series electrode, and device width optimization.…”
Section: Pte Effect In Channel–electrode Junctionssupporting
confidence: 52%
“…[129] Because each processing method has different advantages, an appropriate processing method is selected according to the desired structure. A p-n Bolometer [ 115] Thermal Broad THz-NIR 1 ms 200 pW Hz −1/2 Rigid Photo imaging Photo sensing MEMS bolometer [ 111] Thermal Broad THz-NIR Pyro-electric [ 116] Thermal Sub-THz 2.3 ms 20 nW Hz −1/2 Rigid Photo imaging Photo sensing SBD [112] Electronic THz 1 μs 3 6 . 2 p W H z −1/2 Rigid Photo imaging Photo sensing CMOS [ 113] Electronic Sub-THz N.A.…”
Section: Noise Equivalent Powermentioning
confidence: 99%