NMR investigation of the diluted magnetic semiconductor Li(Zn<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:math>Mn<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mi>x</mml:mi></mml:msub></mml:math>)P (<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>x</mml:mi><mml:mo>=</mm

Ding, Cui; Qin, Chuan; Man, Huiyuan; Imai, Takashi; Ning, Fanlong

doi:10.1103/physrevb.88.041108

Cited by 49 publications

(53 citation statements)

References 25 publications

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“…It has been shown from NMR20 and μ SR measurements that the ferromagnetism in (BaK)(ZnMn) 2 A s 2 9, Li(Zn, Mn)As10, (La, Ba)(Zn, Mn)AsO12 and Li(Zn, Mn)P21 are homogeneous, i.e., the long range ferromagnetic ordering is arising from the Mn atoms doped at Zn sites, instead of Mn related magnetic impurities. Furthermore, μ SR results demonstrated that these bulk form DMSs share the same mechanism for the ferromagnetic ordering as that of (Ga, Mn)As22.…”

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confidence: 99%

Ba(Zn1−2xMnxCux)2As2: A Bulk Form Diluted Ferromagnetic Semiconductor with Mn and Cu Codoping at Zn Sites

Man

Guo

Sui

et al. 2015

Sci Rep

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We report the synthesis and characterization of a bulk form diluted magnetic semiconductor Ba(Zn1−2xMnxCux)2As2 with the crystal structure identical to that of “122” family iron based superconductors and the antiferromagnet BaMn2As2. No ferromagnetic order occurs with (Zn, Mn) or (Zn, Cu) substitution in the parent compound BaZn2As2. Only when Zn is substituted by both Mn and Cu simultaneously, can the system undergo a ferromagnetic transition below TC ~ 70 K, followed by a magnetic glassy transition at Tf ~ 35 K. AC susceptibility measurements for Ba(Zn0.75Mn0.125Cu0.125)2As2 reveal that Tf strongly depends on the applied frequency with and a DC magnetic field dependence of , demonstrating that a spin glass transition takes place at Tf. As large as −53% negative magnetoresistance has been observed in Ba(Zn1−2xMnxCux)2As2, enabling its possible application in memory devices.

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confidence: 99%

Ba(Zn1−2xMnxCux)2As2: A Bulk Form Diluted Ferromagnetic Semiconductor with Mn and Cu Codoping at Zn Sites

Man

Guo

Sui

et al. 2015

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“…The NMR and µSR measurements confirmed that the ferromagnetism in these bulk DMSs is homogeneous. 11,18,20,29 In this article, we report the successful synthesis and characterization of a new DMS with co-doped both Co and Mn into the same Zn sites of LiZnAs. With Co and Mn simultaneously substitution for Zn sites, the system exhibits ferromagnetic order up to 40 K. The influence of Co and Mn concentration on the ferromagnetic ordering state is discussed in detail in this work.…”

Section: Introductionmentioning

confidence: 99%

“…After this discovery, several new types of bulk forms of DMSs with decoupled spins and charges injections have been reported. [17][18][19][20][21][22][23][24][25][26][27] The availability of bulk forms of specimens make it possible to investigate the microscopic magnetism of DMSs based on typical bulk probes, 28 such as nuclear magnetic resonance (NMR), 29 muon spin relaxation (µSR), 17,18,20,30 neutron scattering, absorption spectroscopy (XAS), 31 resonance photoemission spectroscopy (RPES), 31 and angle-resolved photoemission spectroscopy (ARPES). 32 It has been confirmed by the XAS measurements that the valence of Mn in (Ba,K)(Zn,Mn) 2 As 2 is bivalence.…”

Section: Introductionmentioning

confidence: 99%

Li(Zn,Co,Mn)As: A bulk form diluted magnetic semiconductor with Co and Mn co-doping at Zn sites

Chen

Deng

et al. 2016

AIP Advances

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We report the synthesis and characterization of a series of bulk forms of diluted magnetic semiconductors Li(Zn1-x-yCoxMny)As with a crystal structure close to that of III-V diluted magnetic semiconductor (Ga,Mn)As. No ferromagnetic order occurs with single (Zn,Co) or (Zn, Mn) substitution in the parent compound LiZnAs. Only with co-doped Co and Mn ferromagnetic ordering can occur at the Curie temperature ∼40 K. The maximum saturation moment of the this system reached to 2.17μB/Mn, which is comparable to that of Li (Zn,Mn)As. It is the first time that a diluted magnetic semiconductor with co-doping Co and Mn into Zn sites is achieved in “111” LiZnAs system, which could be utilized to investigate the basic science of ferromagnetism in diluted magnetic semiconductors. In addition, ferromagnetic Li(Zn,Co,Mn)As, antiferromagnetic LiMnAs, and superconducting LiFeAs share square lattice at As layers, which may enable the development of novel heterojunction devices in the future.

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“…The strong electron-phonon coupling in molecular junctions can lead to the polaronic regime in which electronic states are dressed by phonon cloud 32,33 . The polaronic effect exhibits novel transport properties, such as negative differential conductance 27,34,35 , phonon-assisted current steps [35][36][37][38][39][40] , Franck-Condon blockade [39][40][41] , sign change in the shot noise correction 42 , and etc.. Rectification effect of electric current in a single molecular dimer, which is modeled as a DQD with strong polaron effect, has been reported 43 , while the thermal rectification counterpart is yet to be revealed.…”

Section: Introductionmentioning

confidence: 99%

Thermal rectification in a double quantum dots system with a polaron effect

2018

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We investigate the rectification of heat current carried by electrons through a double quantum dot (DQD) system under a temperature bias. The DQD can be realized by molecules such as suspended carbon nanotube and be described by the Anderson-Holstein model in presence of electron-phonon interaction. Strong electron-phonon interaction can lead to formation of polaronic states in which electronic states are dressed by phonon cloud. Dressed tunneling approximation (DTA), which is nonperturbative in dealing with strong electron-phonon interaction, is employed to obtain the heat current expression. In DTA, self-energies are dressed by phonon cloud operator and are temperature dependent. The temperature dependency of imaginary part of dressed retarded self-energy gives rise to the asymmetry of the system and is the necessary condition of thermal rectification. On top of this, one can either tune DQD effective energy levels such that |ǭ1| = |ǭ2| or have asymmetric dotlead couplings to achieve thermal rectification. We numerically find that increasing electron-phonon coupling and reducing inter dot coupling can both improve thermal rectification effect, while the electronic heat current is reduced.

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NMR investigation of the diluted magnetic semiconductor Li(Zn1−xMnx)P (x=

Cited by 49 publications

References 25 publications

Ba(Zn1−2xMnxCux)2As2: A Bulk Form Diluted Ferromagnetic Semiconductor with Mn and Cu Codoping at Zn Sites

Ba(Zn1−2xMnxCux)2As2: A Bulk Form Diluted Ferromagnetic Semiconductor with Mn and Cu Codoping at Zn Sites

Li(Zn,Co,Mn)As: A bulk form diluted magnetic semiconductor with Co and Mn co-doping at Zn sites

Thermal rectification in a double quantum dots system with a polaron effect

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