2015
DOI: 10.1038/ncomms7486
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Nitrogenated holey two-dimensional structures

Abstract: Recent graphene research has triggered enormous interest in new two-dimensional ordered crystals constructed by the inclusion of elements other than carbon for bandgap opening. The design of new multifunctional two-dimensional materials with proper bandgap has become an important challenge. Here we report a layered two-dimensional network structure that possesses evenly distributed holes and nitrogen atoms and a C 2 N stoichiometry in its basal plane. The two-dimensional structure can be efficiently synthesize… Show more

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Cited by 993 publications
(717 citation statements)
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References 33 publications
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“…The 2D PANI crystalline films were fabricated by drop casting of the HAB crystals dissolved in trifluoromethanesulfonic acid on the preheated (140°C) SiO 2 (300 nm)/Si substrate and subsequently heat-treated at 700°C in argon atmosphere for 2 h. The thin flakes were transferred to fresh SiO 2 (300 nm)/Si substrate by PDMS stamping (32). Chromium (Cr, 4 nm) and gold (Au, 40 nm) were thermally evaporated.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…The 2D PANI crystalline films were fabricated by drop casting of the HAB crystals dissolved in trifluoromethanesulfonic acid on the preheated (140°C) SiO 2 (300 nm)/Si substrate and subsequently heat-treated at 700°C in argon atmosphere for 2 h. The thin flakes were transferred to fresh SiO 2 (300 nm)/Si substrate by PDMS stamping (32). Chromium (Cr, 4 nm) and gold (Au, 40 nm) were thermally evaporated.…”
Section: Methodsmentioning
confidence: 99%
“…To elucidate the electrical properties, field-effect transistors (FETs) were fabricated using 2D PANI flakes as the active layer. The 2D PANI flakes were isolated onto Si wafer with 300-nm-thick SiO 2 by using polydimethylsiloxane (PDMS) stamping from the prepared films (32). Fig.…”
Section: Significancementioning
confidence: 99%
“…Experimentally, monolayer h2D-C 2 N has been successfully isolated and transferred onto insulating substrate. 20 It shows a direct bandgap ∼1.96 eV measured by optical spectroscopy, and a field-effect-transistor fabricated based on it exhibits a high on/off ratio of 10 7 . 20 Without charge doping, h2D-C 2 N is non-magnetic.…”
Section: Introductionmentioning
confidence: 99%
“…20 It shows a direct bandgap ∼1.96 eV measured by optical spectroscopy, and a field-effect-transistor fabricated based on it exhibits a high on/off ratio of 10 7 . 20 Without charge doping, h2D-C 2 N is non-magnetic. Here, using first-principles calculations, we show that ferromagnetic ordering can be easily induced in h2D-C 2 N monolayer by electron doping, and remarkably, in a wide doping range (4 × 10 13 /cm 2 to 8 × 10 13 /cm 2 ) the material is in fact a halfmetal with fully spin-polarized carriers for conduction.…”
Section: Introductionmentioning
confidence: 99%
“…The atomically thin g-C2N was developed through wet-chemical reactions [83], which expanded the 2D atomic crystal library. Strictly speaking, g-C2N cannot be classified as an ILC due to the carbon present in the composite.…”
Section: Other Synthetic Systems: M-zno and G-c 2 Nmentioning
confidence: 99%