Nitrogen vacancy type defect luminescence of AlN nanopowder

Bērziņa, B.; Trinkler, L.; Korsaks, V.; Ruska, R.

doi:10.1016/j.optmat.2020.110069

Cited by 8 publications

(4 citation statements)

References 32 publications

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“…3, PL measurements indicated that the 390 nm emission peak originating from V N increased with increasing annealing temperature. 33) This suggests that the defect density of V N increased in the samples annealed at higher temperatures, indicating a possible increase of Eu bonding showed by Fig. 5(f), which is in agreement with the XAFS measurements, as shown in Fig.…”

Section: Discussionsupporting

confidence: 88%

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Effect of annealing temperature on Eu²⁺ and Eu³⁺ ratios in AlN:Eu thin films

Miyano,

Qian,

Ishizawa

et al. 2024

Jpn. J. Appl. Phys.

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Eu doped aluminum nitride (AlN:Eu) thin films were fabricated and characterized in a way of white light generation. AlN exhibits blue luminescence originating from defect levels. Furthermore, Eu2+ demonstrates green luminescence, while Eu3+ emits red light. Consequently, white luminescence is anticipated in Eu-doped AIN thin films. The concept is to control the ratio of Eu2+/ Eu3+ in the thin film to vary the emission colors. We aimed to manipulate the Eu valence ratio in AIN:Eu thin films by changing the annealing temperature and to examine the resultant luminescence characteristics. Our findings revealed an increase in the defect-related luminescence in AIN samples annealed at higher temperatures, along with a rise in the Eu2+ fraction. We explore these outcomes in relation to the structural models surrounding Al and Eu ions, as elaborated in the main text.

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Section: Discussionsupporting

confidence: 88%

“…The D peak at 390 nm has been reported by B. Berzina et al as originating from nitrogen-vacancy (V N ). 33) Figure 3 shows the X-ray absorption near-edge structure (XANES) spectra of the AlN:Eu samples at the L-Ⅲ edge. X-ray absorption peaks for Eu 2+ and Eu 3+ are located at 6972 eV and 6980 eV, respectively.…”

Section: Resultsmentioning

confidence: 99%

Effect of annealing temperature on Eu²⁺ and Eu³⁺ ratios in AlN:Eu thin films

Miyano,

Qian,

Ishizawa

et al. 2024

Jpn. J. Appl. Phys.

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“…The reason for obtaining PL in the visible region and UV for the AlN is the surface defects and impurity-related defects in the material lattice. The most observed point defects are the Al vacancy (VAl) and Nitrogen vacancy (VN) along with other native vacancies that depend upon the replacement of the host atoms with the other elemental atoms such as oxygen related vacancy (O + N), and other various defect complexes (V 3-Al -3 × O + N) [9][10]. The recombination of the photogenerated hole with the nitrogen-vacancy occupied electron, due to the transitions between the deep level of (V 3-Al -3 × O + N) defect complexes and shallow level of VN may also be the reason for the obtained peaks [20].…”

Section: Resultsmentioning

confidence: 99%

“…With the integration of other elemental impurities in the material, the host element is replaced leading to the production of different kinds of defects like oxygen-related defects and other impurities-related defects. "ON" [9,10]. AlN with its excellent properties plays a role in several applications of optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

Near UV and Visible Region Photoluminescence Curves Study for AlN Thin Film and AlN Nanopowder

Hussain

Huda

Jawaid

et al. 2022

Advances in Science and Technology

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Well dispersed Aluminum Nitride (AlN) nanopowder and AlN thin film were compared to observe their structural and luminescence properties. AlN thin films were deposited on silicon and copper substrates by RF magnetron sputtering. PL peaks analysis indicated the same pattern of emission peaks over different excitation wavelengths ranging from 200 nm to 300 nm for both the AlN nanopowder and thin film, nearly 100 -1000 times PL increment observed in AlN nanopowder. It is suggested that the reason for PL of AlN material is due to surface defects and impurities like oxygen-related point defects (O+N), nitrogen vacancies (VN), the transition from the donor level of VN (nitrogen-vacancy) to the acceptor level of AlN (antisites defects), and various defect complexes (V3-Al – 3 O+N) are responsible for the enhanced observed emission peaks. With well-defined emission curves, AlN Nanopowder and thin films are observed to be good substrate and insulator material for microelectronic circuits, Light Emitting Diodes, Laser Diodes, and in biomedical applications such as bioimaging and biosensors.

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