Ultraviolet optical properties analysis of wurtzite AlN films grown by vapor phase epitaxy

Chen, Guifeng; Zhang, Yin; Zhang, Hui; Xie, Luxiao; Zhang, Xing; Cheng, Zishuang; Li, Haoran; Xiao, Yiming; Liang, H W; Liu, Huaize; Xie, Xinjian; Bian, Lifeng; Liu, Guodong

doi:10.1016/j.optmat.2020.110678

Cited by 17 publications

(5 citation statements)

References 24 publications

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“…[30][31][32] There is also a luminescence peak between 340 and 350 nm (3.54 to 3.64 eV), which is thought to be due to V N nitrogen vacancies. [7] This shows the presence of oxygen impurities and nitrogen vacancies in all three samples. In Figure 10, the transmission spectra of samples AlN/Sapphire, AlN/Si, and AlN/GaN are shown.…”

Section: Discussionmentioning

confidence: 76%

AlN Thin Films Grown on Different Substrates by Metal Nitride Vapor Phase Epitaxy

Wang

Zhang

Xie

et al. 2023

Cryst. Res. Technol.

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In this paper, AlN thin films are fabricated by green and efficient metal nitride vapor phase epitaxy (MNVPE). First, AlN films are grown on c‐plane sapphire substrates at different molar flow ratios (V/III ratios) of the source material, and the effects of V/III on the crystal quality and surface morphology of the films are investigated. The growth conditions are kept constant (growth temperature of 1550 °C, growth pressure of 10 kPa, V/III ratio of 4420), and the AlN thin films are prepared by heterogeneous epitaxial growth on c‐plane sapphire, silicon (111), and GaN substrates. The crystal quality, residual stress, and luminescence properties of epitaxial AlN thin films on the three substrates are investigated using X‐ray diffraction, scanning electron microscopy, Raman spectroscopy, photoluminescence, and UV spectrophotometer. Among them, the FWHM value of the sample AlN/GaN (002) plane can reach 338 arcsec. The residual stress in samples AlN/Sapphire, AlN/GaN and AlN/Si are 1027, −81, and −541 MPa, respectively, and the sample AlN/GaN has fewer point defects. At the same time, a 50‐nanometer‐thick void layer appears in the AlN thin film samples prepared on GaN substrates, which provides a new technical idea for realizing large‐scale and high‐quality self‐supporting AlN thin films.

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Section: Discussionmentioning

confidence: 76%

AlN Thin Films Grown on Different Substrates by Metal Nitride Vapor Phase Epitaxy

Wang

Zhang

Xie

et al. 2023

Cryst. Res. Technol.

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“…As one of the main types of coke microstructure, the optical structure has a decisive influence on the macroscopic properties and has become an important means to evaluate the quality of coke. Cheng et al [20] measured the optical structure content and comprehensive properties of coke at different temperatures. The results showed that the optical structure had different depth effects on the initial reaction temperature, average melt loss rate, and post-reaction strength of coke under the same melt loss rate.…”

Section: Introductionmentioning

confidence: 99%

Microstructure and Melting Loss Behavior of Blast Furnace Incoming Coke and Radial Tuyere Coke

Chang

et al. 2022

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As an indispensable raw material in blast furnace ironmaking, coke plays an important role, which is also the key to low-carbon smelting and reducing ironmaking carbon emissions, so it is necessary to study its quality, degradation behavior, and microstructure evolution. In this work, the pore structure and micromorphology of the blast furnace incoming coke (IC) and tuyere coke (TC) were analyzed comprehensively by comparative research methods. The results showed that the microcrystalline structure of TC was more orderly than that of IC. In addition, the order degree of the coke microcrystalline structure increased first and then decreased in the radial direction and reached the highest value at the distance of 1–2 m from the tuyere. The porosity of radial TC increased obviously. The pore wall became thinner, and the pore size of the original micropores in TC expanded. Simultaneously, large numbers of micropores were also generated, and cracks appeared, resulting in the specific surface area and pore volume of TC becoming higher than that of IC. Moreover, the graphite structure inside TC increased, and the crystal structure became larger. In the radial direction, with an increase in temperature, the number of amorphous structures in coke decreased, the ordering increased, and the graphite structure continued to grow. However, along the direction of the furnace core, a decrease in temperature led to the stagnation of amorphous structure content and a decrease in graphitization degree.

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“…Aluminum nitride (AlN) is a versatile III-V compound semiconductor that has emerged as a promising candidate for various applications. Because of its wide bandgap (6.2 eV), AlN is useful for optoelectronic applications, including UV emitters and detectors [1][2][3][4]. It can also be used in high-power/temperature electronics due to its high thermal conductivity, high chemical stability, high-temperature stability, and large dielectric breakdown field [5,6].…”

Section: Introductionmentioning

confidence: 99%

Low-Temperature Epitaxial Growth of AlN Thin Films on a Mo Electrode/Sapphire Substrate Using Reactive Sputtering

Kim

2021

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High-crystalline aluminum nitride (AlN) thin films are essential for device applications, and epitaxial growth is a promising approach to improve their crystalline quality. However, a high substrate temperature is usually required for the epitaxial growth, which is not compatible with the complementary metal-oxide-semiconductor (CMOS) process. Furthermore, it is very difficult to obtain epitaxial AlN thin films on the deposited metal layers that are sometimes necessary for the bottom electrodes. In this work, epitaxial AlN thin films were successfully prepared on a molybdenum (Mo) electrode/sapphire substrate using reactive sputtering at a low substrate temperature. The structural properties, including the out-of-plane and in-plane relationships between the AlN thin film and the substrate, were investigated using X-ray diffraction (XRD) 2θ-ω, rocking curve, and pole figure scans. Additional analyses using scanning electron microscopy (SEM), atomic force microscopy (AFM), and transmission electron microscopy (TEM) were also carried out. It was shown that highly c-axis-oriented AlN thin films were grown epitaxially on the Mo/sapphire substrate with an in-plane relationship of AlN [112¯0]//sapphire [101¯0]. This epitaxial growth was attributed to the highly ordered and oriented Mo electrode layer grown on the sapphire substrate. In contrast, the AlN deposition on the Mo/SiO2/Si substrate under the same conditions caused poorly oriented films with a polycrystalline structure. There coexisted two different low-crystalline phases of Mo (110) and Mo (211) in the Mo layer on the SiO2/Si substrate, which led to the high mosaicity and polycrystalline structure of the AlN thin films.

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Ultraviolet optical properties analysis of wurtzite AlN films grown by vapor phase epitaxy

Cited by 17 publications

References 24 publications

AlN Thin Films Grown on Different Substrates by Metal Nitride Vapor Phase Epitaxy

AlN Thin Films Grown on Different Substrates by Metal Nitride Vapor Phase Epitaxy

Microstructure and Melting Loss Behavior of Blast Furnace Incoming Coke and Radial Tuyere Coke

Low-Temperature Epitaxial Growth of AlN Thin Films on a Mo Electrode/Sapphire Substrate Using Reactive Sputtering

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