Nitrogen-oxygen complexes in Czochralski-silicon

Wagner, P.; Oeder, R.; Zulehner, W.

doi:10.1007/bf00615911

Cited by 82 publications

(42 citation statements)

References 3 publications

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“…These are associated with N-N 25 pairing in the silicon. Additionally, there are N-O defects 26 that form if both oxygen and nitrogen are present in CZ or FZ. Such defects show three LVMs at 805, 1000 and 1030 cm…”

Section: Light Elements Thermal Donors and Radiation Effectsmentioning

confidence: 99%

Infrared Characterization of Device‐Quality Silicon

Medernach¹

2001

Handbook of Vibrational Spectroscopy

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Vibrational spectroscopy is the major optical characterization technique for semiconductor device‐quality silicon and its associated compounds. The vibrational bands in silicon result from phonon absorption and impurities such as oxygen (O 2 ), nitrogen (N 2 ) and carbon (C). Information relating to the thickness dependence of the phonon bands and the baseline distortions created by free carriers, roughness, and multiple reflections is provided. A discussion of various new and old techniques used to determine the interstitial O 2 , substitutional C and SiO x precipitates is presented. Further discussion includes the methods to determine the thickness of epitaxial silicon and SiGe composite layers, and the more recent developments including numerical simulations and concentration profiles of epitaxial layers. A brief review is given for the measurement techniques and calibrations of oxide, doped oxide and nonoxide layer thickness that is crucial to semiconductor device fabrication. The application of photoluminescence (PL) and Raman methods are also briefly discussed.

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Section: Light Elements Thermal Donors and Radiation Effectsmentioning

confidence: 99%

Infrared Characterization of Device‐Quality Silicon

Medernach¹

2001

Handbook of Vibrational Spectroscopy

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“…Upon heating, the oxygen atoms would break free and easily diffuse in the matrix, leaving the N-pair intact. Indeed, FTIR measurements have shown a reversible formation and dissociation mechanism between N-N and N-O complexes upon successive heating and cooling (Wagner et al, 1988;Qi et al, 1992). .…”

Section: Formation Energy Of N 2 O N Vn 2 O N V 2 N 2 O N Complexmentioning

confidence: 99%

“…Measured FTIR spectra for N-N and N-O defects (Stein, 1983;Wagner, 1988;Qi et al, 1991;Qi et al, 1992).…”

mentioning

confidence: 99%

Application of Quantum Mechanics for Computing the Vibrational Spectra of Nitrogen Complexes in Silicon Nanomaterials

Karoui¹,

Karoui²

2012

Some Applications of Quantum Mechanics

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“…The peak at 1026 cm -1 is caused by Si-O stretch in the NNO complexes, which has been identified in the experiment using N isotope [8]. Wagner et al [9] reported that a short period of annealing at 770 o C decreased the absorption of N-O related lines and increased the absorption of the N-N pairs related lines, but this tread could be reversed by a low-temperature anneal. Qi et al [10] investigated the variation of IR absorption intensities of N-N pairs and NNO complexes in the NCZ silicon annealed at 600-800 o C. As a result, they revealed a specific correlation between the IR absorption of N-N pairs and that of NNO complexes.…”

mentioning

confidence: 95%

Evolution of nitrogen pairs and nitrogen‐oxygen complexes in nitrogen‐doped Czochralski silicon

Yang

et al. 2007

Phys. Status Solidi (c)

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By means of Fourier-transform infrared absorption spectroscopy, the evolution of nitrogen pairs (N-N) and nitrogen-oxygen complex (NNO) in nitrogen doped Czochralski (NCZ) silicon annealed at 650 o C has been investigated. The evolution of N-N pairs and NNO complexes has been semi-quantitatively elucidated based on the diffusion-limited reaction theory. It is pointed out that the N-O pairs and NNO complexes react with the interstitial atoms, leading to NNO x (x ≥ 1) particles, which serve as the nuclei of oxygen precipitate. o C. As a result, they revealed a specific correlation between the IR absorption of N-N pairs and that of NNO complexes. Katsuto [11] found that when NCZ silicon was subjected to isothermal annealing at 600 o C and 750 o C for 2 h and then quenched in air, the formation-dissociation reaction of N-related defects would reach the quasithermalequilibrium state. However, the involved annealing in most of the above-mention investigation extended for only several hours. Long-time annealing may lead to the insight into the kinetics of the evolution process of the nitrogen-related species during the annealing. In this study, nitrogen pair (N-N) and nitrogen-oxygen complex (NNO) annealing behavior at 650

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Nitrogen-oxygen complexes in Czochralski-silicon

Cited by 82 publications

References 3 publications

Infrared Characterization of Device‐Quality Silicon

Infrared Characterization of Device‐Quality Silicon

Application of Quantum Mechanics for Computing the Vibrational Spectra of Nitrogen Complexes in Silicon Nanomaterials

Evolution of nitrogen pairs and nitrogen‐oxygen complexes in nitrogen‐doped Czochralski silicon

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