Evolution of nitrogen pairs and nitrogen‐oxygen complexes in nitrogen‐doped Czochralski silicon

Abstract

By means of Fourier-transform infrared absorption spectroscopy, the evolution of nitrogen pairs (N-N) and nitrogen-oxygen complex (NNO) in nitrogen doped Czochralski (NCZ) silicon annealed at 650 o C has been investigated. The evolution of N-N pairs and NNO complexes has been semi-quantitatively elucidated based on the diffusion-limited reaction theory. It is pointed out that the N-O pairs and NNO complexes react with the interstitial atoms, leading to NNO x (x ≥ 1) particles, which serve as the nuclei of oxygen precipitate. o C. As a result, they revealed a specific correlation between the IR absorption of N-N pairs and that of NNO complexes. Katsuto [11] found that when NCZ silicon was subjected to isothermal annealing at 600 o C and 750 o C for 2 h and then quenched in air, the formation-dissociation reaction of N-related defects would reach the quasithermalequilibrium state. However, the involved annealing in most of the above-mention investigation extended for only several hours. Long-time annealing may lead to the insight into the kinetics of the evolution process of the nitrogen-related species during the annealing. In this study, nitrogen pair (N-N) and nitrogen-oxygen complex (NNO) annealing behavior at 650

Nitrogen-Related Defects in Crystalline Silicon

“…However, preliminary research [95] has concluded that between the NO 2 and the N 2 O 2 defects the latter is most possibly linked with the two bands, although further wok is required to verify this assignment. We notice that NNO x (x ≥ 1) particles have been found [97] to serve as nuclei for oxygen precipitates, although other works have reported that only NO 2 species can act [93] as nuclei for oxygen precipitates. Due to the significance of oxygen precipitates for silicon-based industries, any information about nitrogen-oxygen defects is valuable.…”