Nitrogen Ion Implantation into 6H-SiC and Application to High-Temperature, Radiation-Hard Diodes

Yaguchi, Seiji; Kimoto, Tsunenobu; Ohyama, Naoki; Matsunami, Hiroyuki

doi:10.1143/jjap.34.3036

Cited by 20 publications

(4 citation statements)

References 24 publications

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“…7, the Z 1/2 center was generated in a much deeper region than the implanted box profile. The real implant profile may be deeper than the TRIM simulation profile due to channeling effects, 25,26 although secondary ion mass spectroscopy ͑SIMS͒ analyses of implanted species are difficult due to the very low concentration ͑ Ͻ 7 ϫ 10 14 cm −3 ͒. The Z 1/2 concentration near the surface for ion-implanted samples is about 100 times higher than that for the nonimplanted sample.…”

Section: B Deep Levels Detected In P-type Materialsmentioning

confidence: 99%

Detection and depth analyses of deep levels generated by ion implantation in n- and p-type 4H-SiC

Kawahara

Alfieri

Kimoto

2009

Journal of Applied Physics

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The authors investigated deep levels in the whole energy range of bandgap of 4H-SiC, which are generated by low-dose N + , P + , and Al + implantation, by deep level transient spectroscopy ͑DLTS͒. Ne +-implanted samples have been also prepared to investigate the pure implantation damage. In the n-type as-grown material, the Z 1/2 ͑E C − 0.63 eV͒ and EH 6/7 ͑E C − 1.6 eV͒ centers are dominant deep levels. At least, seven peaks ͑IN1, IN3-IN6, IN8, and IN9͒ have emerged by implantation and annealing at 1000°C in the DLTS spectra from all n-type samples, irrespective of the implanted species. After high-temperature annealing at 1700°C, however, most DLTS peaks disappeared, and two peaks, IN3 and IN9, which may be assigned to Z 1/2 and EH 6/7 , respectively, survive with a high concentration over the implanted atom concentration. In the p-type as-grown material, the D ͑E V + 0.40 eV͒ and HK4 ͑E V + 1.4 eV͒ centers are dominant. Two peaks ͑IP1 and IP3͒ have emerged by implantation and annealing at 1000°C, and four traps IP2 ͑E V + 0.39 eV͒, IP4 ͑E V + 0.72 eV͒, IP7 ͑E V + 1.3 eV͒, and IP8 ͑E V + 1.4 eV͒ are dominant after annealing at 1700°C in all p-type samples. The IP2 and IP8 may be assigned to the HS1 and HK4 centers, respectively. The depth analyses have revealed that the major deep levels are generated in the much deeper region than the implant profile.

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Section: B Deep Levels Detected In P-type Materialsmentioning

confidence: 99%

Detection and depth analyses of deep levels generated by ion implantation in n- and p-type 4H-SiC

Kawahara

Alfieri

Kimoto

2009

Journal of Applied Physics

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“…[164]. SiC samples were implanted with N, B or Al at the energy of 60 keV to the dose of 7.5 × 10 12 -2.5 × 10 17 at/cm 2 and subsequently activated at temperatures of 800-1400 • C. In further studies the nitrogen implanted silicon carbide with the wide range of the energies and doses was used for the formation of p-n junction [165,166], determination of diffusion coefficients [167,168], the electric activation of nitrogen [169][170][171][172][173] and the dopant energy levels in the band gap [174].…”

Section: Nitrogen Properties In Sicmentioning

confidence: 99%

The Role of Atmospheric Elements in the Wide Band-Gap Semiconductors

2019

Acta Phys. Pol. A

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The paper addresses the role of ambient elements (H, C, N and O) in the wide-bandgap semiconductor compounds. Their prevalence in the atmosphere imposes limitations not only on the purity of the materials under processing but, also, on the detection and measurement of the content of these species. Specifically, a review of electrical and optical properties, based on the available literature, is presented for: hydrogen in GaN, ZnO and SiC, carbon in GaN and ZnO, nitrogen in ZnO and SiC and oxygen in GaN and SiC. Further, the refinements of the SIMS (Secondary Ions Mass Spectrometry) analytical technique, aiming to improve the sensitivity and detection limit of atmospheric elements, are described in detail. These include the choice of primary beam type and current, type of secondary single or cluster ions, geometry and vacuum conditions. Finally, the evaluated so-called RSF parameters (Relative Sensitivity Factors) are given for each atom-semiconductor pair, converting raw data to the absolute value of concentration.

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“…However, the distribution of ions in SiC in terms of straggling is wider as calculated. This originates mainly from more pronounced channeling (17), the fact that electronic processes reduce the nuclear energy transfer and therefore also the total stopping power (18) as well as from swelling of the SiC crystal during high dose implantations. Since impurity diffusivities in SiC are extremely low, multiple implantations with different energies are needed in order to fulfill the technological requirements of extended profiles in electronic SiC devices.…”

Section: Sicmentioning

confidence: 99%

(Invited) Challenges for Ion Implantation in Power Device Processing

Schustereder

2017

ECS Trans.

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Ion Implantation processes contribute significantly to the development of power devices. Typically not smallest scale technologies are addressed, however accurate treatment of the frontside, backside and sometimes even bulk material play a crucial role to guarantee for key parameters such as highest power densities, minimal energy dissipation and required switching behavior at the same time. Some representative examples of the development needs of power device technologies based on silicon are described and challenges for ion implantation processing are concluded. Semiconductor materials like SiC and GaN obtain superior material characteristics compared to silicon and are therefore about to get of economic importance in the near future. Considerable development effort is put into the understanding of how to fabricate devices based on those materials. One ingredient is the knowledge how ion implantation can affect and tailor their semiconductor properties in a suitable manner.

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Nitrogen Ion Implantation into 6H-SiC and Application to High-Temperature, Radiation-Hard Diodes

Cited by 20 publications

References 24 publications

Detection and depth analyses of deep levels generated by ion implantation in n- and p-type 4H-SiC

Detection and depth analyses of deep levels generated by ion implantation in n- and p-type 4H-SiC

The Role of Atmospheric Elements in the Wide Band-Gap Semiconductors

(Invited) Challenges for Ion Implantation in Power Device Processing

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