2017
DOI: 10.1149/07705.0031ecst
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(Invited) Challenges for Ion Implantation in Power Device Processing

Abstract: Ion Implantation processes contribute significantly to the development of power devices. Typically not smallest scale technologies are addressed, however accurate treatment of the frontside, backside and sometimes even bulk material play a crucial role to guarantee for key parameters such as highest power densities, minimal energy dissipation and required switching behavior at the same time. Some representative examples of the development needs of power device technologies based on silicon are described and ch… Show more

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Cited by 3 publications
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