Nitride‐based quantum dots for single photon source applications

Jarjour, Anas F.; Oliver, Rachel A.; Taylor, Robert A.

doi:10.1002/pssa.200824455

Cited by 24 publications

(18 citation statements)

References 65 publications

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“…Nitride-based QDs [ 104 ] have been investigated due to their possible attractive properties as SPSs, among them, the potential to operate at room temperature due to the large band offsets available between the different nitride semiconductors. Indeed, GaN/AlN QDs have recently provided UV SPS operating at temperatures up to 200 K. [ 105 ] By changing the alloy content in InGaN QDs, the visible single-photon spectrum can cover the emission tuned from blue to green wavelengths.…”

Section: Ii-vi Semiconductors and Nitride-based Quantum Ledsmentioning

confidence: 99%

Electrically Driven Quantum Light Sources

Boretti

Rosa

Mackie

et al. 2015

Advanced Optical Materials

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Typical applications of quantum light require optical sources which generate either individual photons or entangled (correlated) photons. For the sake of practicality and scalability, these quantum sources should be easily produced, operate at room temperature, and be electrically excited and controlled. Here, recent research on quantum sources obtained from electrically driven (ED) devices constructed from p-n junctions integrated in planar optical cavities, micropillars, nanowires, photonic crystals, and active plasmonic elements is reviewed. Single-photon and entangled-photon sources are distinguished by their different roles in the development of either quantum cryptography or quantum computing protocols, and the different types of devices used to produce them are highlighted, with a focus on their spectral emission, brightness, and conditions of operation. Achievements to date are summarized and compared with prerequisites for the practical use of these sources. Important recent results that could provide future novel quantum sources are also in focus, where more practical requirements could be addressed by the judicious engineering of materials and careful device design

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Section: Ii-vi Semiconductors and Nitride-based Quantum Ledsmentioning

confidence: 99%

Electrically Driven Quantum Light Sources

Boretti

Rosa

Mackie

et al. 2015

Advanced Optical Materials

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“…Nitride-based quantum dots (QDs) have been suggested to be very promising candidates for a variety of optoelectronic applications and for the investigation of light-matter interactions 1,2 . The large band offset between QD and matrix material and large exciton binding energy offer the potential of single photon emission up to room temperature or at least up to temperatures easily accessible by thermoelectric cooling 3 .…”

mentioning

confidence: 99%

Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy

Zhu

Oehler

Reid

et al. 2013

Applied Physics Letters

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We report on the optical characterization of non-polar a-plane InGaN quantum dots (QDs) grown by metal-organic vapor phase epitaxy using a short nitrogen anneal treatment at the growth temperature. Spatial and spectral mapping of sub-surface QDs have been achieved by cathodoluminescence at 8 K. Microphotoluminescence studies of the QDs reveal resolution limited sharp peaks with typical linewidth of 1 meV at 4.2 K. Time-resolved photoluminescence studies suggest the excitons in these QDs have a typical lifetime of 538 ps, much shorter than that of the c-plane QDs, which is strong evidence of the significant suppression of the internal electric fields.

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“…Nevertheless, all these results were realized under optical excitation, while only very few and recent results exist concerning the electroluminescence (EL) of QDs in the visible spectral region [21][22][23]. However, these measurements were limited to temperatures up to 85 K observed on single emission lines superimposed to a QD ensemble.…”

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confidence: 91%

Optical properties of single InGaN quantum dots and their devices

Sebald

Kalden

Lohmeyer

et al. 2011

Physica Status Solidi (b)

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Nitride-based quantum dots have many attractive optical properties for the realization of quantum dot (QD) based devices which will be presented in this contribution. We will analyze the basic characteristics of single InGaN QDs and their electroluminescence (EL) as well as the optical properties of QD stacks and their gain spectra. The single QDs are characterized by the high temperature stability of their emission up to 150 K in PL and EL and even up to room temperature for stacked QD samples. Furthermore, the polarization of individual QD emission lines was analyzed giving an insight into their geometrical shape. Time-resolved microphotoluminescence (m-PL) measurements on the excitonic and biexcitonic transition of a single QD as well as on the influence of piezoelectric fields on them and on their binding energy were performed. Further, we present an analysis of electrically driven luminescence from single InGaN QDs embedded into a light emitting diode structure showing single sharp emission lines in the green spectral region with a high temperature stability up to 150 K. Furthermore, for the possible integration within optical devices in the future the threshold power density as well as the modal gain were investigated for samples with stacked InGaN QD layers. They show a modal gain per QD being comparable to that of II-VI and III-As compounds. These results give a good insight into the basic optical properties of InGaN QD based devices and showing their high potential for electrically driven single photon emitters as well as for bright, low-threshold InGaN QD based light emitting devices in the near future.

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Nitride‐based quantum dots for single photon source applications

Cited by 24 publications

References 65 publications

Electrically Driven Quantum Light Sources

Electrically Driven Quantum Light Sources

Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy

Optical properties of single InGaN quantum dots and their devices

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