NiSi2/Si interface chemistry and epitaxial growth mode

Mi, Shao‐Bo; Jia, Chun‐Lin; Zhao, Qing‐Tai; Mantl, S.; Urban, K.

doi:10.1016/j.actamat.2008.09.002

Cited by 18 publications

(6 citation statements)

References 17 publications

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“…The second-step FIR-LA melts the high-resistivity Ni 2 Si phase near the surface and the melt front diffuses downward to the Si and Ni 2 Si interface. The mixing of Ni 2 Si and Si occurs via liquid phase diffusion [ 38 ], which leads to a uniform NiSi film without heterogeneous aggregation and spike at the interface between the NiSi and the Si, which is confirmed in Figure 6 b,c. The atomic percentage of Si, identified by energy-dispersive X-ray spectroscopy (EDS), slightly raises from 49.87 (point 1) to 54.74% (point 3), implying Ni 2 Si diffused from the surface to the bottom.…”

Section: Resultsmentioning

confidence: 77%

“…Nickel salicidation is a crucial process for advanced MOS transistors for its low Si consumption, low formation temperature, and low line width sheet resistance dependence as compared to cobalt or titanium silicide [ 18 , 19 ]. Previous studies proved that a rough NiSi film and NiSi 2 facet (111) formed during conventional two-step RTA, which will lead to Fermi-level pining and a junction spiking leakage current [ 38 , 39 ]. Additionally, the second step of conventional two-step RTA usually reaches 400 to 600 °C to form a low-resistivity NiSi film, which is slightly higher than the BEOL CMOS process requirement that may cause a reliability issue for monolithic stacking [ 9 , 10 ].…”

Section: Resultsmentioning

confidence: 99%

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Single-Grain Gate-All-Around Si Nanowire FET Using Low-Thermal-Budget Processes for Monolithic Three-Dimensional Integrated Circuits

Hsieh

Yang

et al. 2020

Micromachines

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We introduce a single-grain gate-all-around (GAA) Si nanowire (NW) FET using the location-controlled-grain technique and several innovative low-thermal budget processes, including green nanosecond laser crystallization, far-infrared laser annealing, and hybrid laser-assisted salicidation, that keep the substrate temperature (Tsub) lower than 400 °C for monolithic three-dimensional integrated circuits (3D-ICs). The detailed process verification of a low-defect GAA nanowire and electrical characteristics were investigated in this article. The GAA Si NW FETs, which were intentionally fabricated within the controlled Si grain, exhibit a steeper subthreshold swing (S.S.) of about 65 mV/dec., higher driving currents of 327 µA/µm (n-type) and 297 µA/µm (p-type) @ Vth ± 0.8 V, and higher Ion/Ioff (>105 @|Vd| = 1 V) and have a narrower electrical property distribution. In addition, the proposed Si NW FETs with a GAA structure were found to be less sensitive to Vth roll-off and S.S. degradation compared to the omega(Ω)-gate Si FETs. It enables ultrahigh-density sequentially stackable integrated circuits with superior performance and low power consumption for future mobile and neuromorphic applications.

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Section: Resultsmentioning

confidence: 77%

Section: Resultsmentioning

confidence: 99%

Single-Grain Gate-All-Around Si Nanowire FET Using Low-Thermal-Budget Processes for Monolithic Three-Dimensional Integrated Circuits

Hsieh

Yang

et al. 2020

Micromachines

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“…One way to grow epitaxial NiSi 2 (epi-NiSi 2 ) is to deposit a Ni thin film under the critical thickness (about 4.2 nm) on a Si wafer and then anneal it. [11][12][13] Below the critical value, surface and interfacial energies played an essential role in the total heat of formation, making NiSi 2 , which is usually formed at approximately 750 °C, the energetically favorable product at lower temperatures and epitaxially aligned due to low lattice mismatch with Si. The epi-NiSi 2 thin films grown on the Si surface can be controlled to less than 10 nm in thickness with an atomically flat interface.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial silicides: the case of Fe, Ni, and Ti

Hsin

Tsai

2016

CrystEngComm

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Ultra-thin epitaxial silicides were formed and their structures were examined by electron microscopy and X-ray diffraction. The epitaxial relationship between the silicides and Si was discovered and examined by electron diffraction patterns. The thickness of the silicide can be controlled by a double-sputtering process, rather than by the amount of deposited metals. Intermediate and low temperature phase silicides (C40-TiSi 2 and Fe 2 Si) were observed, suggesting that process control is also an important factor, rather than the symmetry between the crystal structures of Si and silicide. This study is constructive to the basic understanding of the initial stage of the reaction that leads to epitaxial films on Si, as well as the epitaxial relationship of the crystalline layers. The observations may be useful for future design and application of nano-MOSFET and optoelectronics.

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“…The plastic deformation of Nb SS and interface decohesion is responsible for high fracture toughness in this system [2,7]. There are many investigations about the internal interface structure by HRTEM [12][13][14][15]. However, few experimental quantitative studies about interface adhesion have been carried out because of its difficulties.…”

Section: Introductionmentioning

confidence: 99%

Atomic structure and adhesion of the Nb(001)/α-Nb₅Si₃(001) interface: a first-principles study

Shang

Guan

Wang

2010

J. Phys.: Condens. Matter

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The density functional calculations have been performed to study the Nb(001) and α-Nb5Si3(001) surfaces as well as the interface properties of Nb(001)/α-Nb5Si3(001). The surface energy of the Nb(001) surface is about 2.25 J m (- 2). The calculated cleavage energies of bulk Nb5Si3 are 5.103 J m (- 2) and 5.787 J m (- 2) along (001) planes with the breaking of Nb-Si and Nb-NbSi bonds, respectively. For the Nb(001)/α-Nb5Si3(001) models, the Nb atoms in the interface region initially belonging to body centered cubic metal Nb are twisted to the position of the Nb atom layer in Nb5Si3 and the interlayer distance is similar to that of bulk Nb5Si3 after being fully relaxed. The ideal work of adhesion of the Nb(001)/Nb5Si3(001) interface is calculated and compared to those of bulk Nb and Nb5Si3. The results show that the bulk Nb5Si3 has the largest work of adhesion, the bcc Nb ranks second and the interface ranks last. Moreover, the Nb-Si bond is weaker than Nb-NbSi and Nb-Nb bonds in the interface, which means that the Nb-Si bond in the interface is the most possible site for the micro-crack generation when the stress is applied quasi-statically along the [001] direction. The densities of states, Mulliken population and overlap population of the Nb(001)/α-Nb5Si3(001) interface are also analyzed.

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NiSi2/Si interface chemistry and epitaxial growth mode

Cited by 18 publications

References 17 publications

Single-Grain Gate-All-Around Si Nanowire FET Using Low-Thermal-Budget Processes for Monolithic Three-Dimensional Integrated Circuits

Single-Grain Gate-All-Around Si Nanowire FET Using Low-Thermal-Budget Processes for Monolithic Three-Dimensional Integrated Circuits

Epitaxial silicides: the case of Fe, Ni, and Ti

Atomic structure and adhesion of the Nb(001)/α-Nb₅Si₃(001) interface: a first-principles study

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NiSi2/Si interface chemistry and epitaxial growth mode

Cited by 18 publications

References 17 publications

Single-Grain Gate-All-Around Si Nanowire FET Using Low-Thermal-Budget Processes for Monolithic Three-Dimensional Integrated Circuits

Single-Grain Gate-All-Around Si Nanowire FET Using Low-Thermal-Budget Processes for Monolithic Three-Dimensional Integrated Circuits

Epitaxial silicides: the case of Fe, Ni, and Ti

Atomic structure and adhesion of the Nb(001)/α-Nb5Si3(001) interface: a first-principles study

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Atomic structure and adhesion of the Nb(001)/α-Nb₅Si₃(001) interface: a first-principles study