NiSi salicide technology for scaled CMOS

Iwai, Hiroshi; Ohguro, T.; Ohmi, Shun–ichiro

doi:10.1016/s0167-9317(01)00684-0

Cited by 295 publications

(171 citation statements)

References 12 publications

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Section: Introductionmentioning

confidence: 99%

“…Although TiSi 2 and CoSi 2 have been widely used for the salicide (selfaligned silicide) process, they have several limits such as agglomeration and the phase transformation of TiSi 2 in the high temperature thermal process of CMOS (Complementary Metal Oxide Semiconductor) fabrication. Moreover, with the scale-down of devices, the narrow line effect of TiSi 2 and the large Si consumption of CoSi 2 have become serious problems in the fabrication of a ultra-shallow source/drain junction. Having advantages such as low temperature silicidation process, low silicon consumption, no bridging failure property, smaller mechanical stress, no adverse narrow line effect on sheet resistance, smaller contact resistance for both n-and p-Si and so on, nickel silicide has been thought as the most promising silicide layer [2].…”

Section: Introductionmentioning

confidence: 99%

“…Moreover, with the scale-down of devices, the narrow line effect of TiSi 2 and the large Si consumption of CoSi 2 have become serious problems in the fabrication of a ultra-shallow source/drain junction. Having advantages such as low temperature silicidation process, low silicon consumption, no bridging failure property, smaller mechanical stress, no adverse narrow line effect on sheet resistance, smaller contact resistance for both n-and p-Si and so on, nickel silicide has been thought as the most promising silicide layer [2]. Even so, NiSi has several challenges and one of them is the hightemperature degradation of NiSi [3].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Improvement of Thermal Stability of Nickel Silicide Using Co-sputtering of Ni and Ti for Nano-Scale CMOS Technology

Li¹,

Oh²,

Shin³

et al. 2013

JSTS:Journal of Semiconductor Technology and Science

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Abstract-In this paper, a thermally stable nickel silicide technology using the co-sputtering of nickel and titanium atoms capped with TiN layer is proposed for nano-scale metal oxide semiconductor field effect transistor (MOSFET) applications. The effects of the incorporation of titanium ingredient in the co-sputtered Ni layer are characterized as a function of Ti sputtering power. The difference between the one-step rapid thermal process (RTP) and two-step RTP for the silicidation process has also been studied. It is shown that a certain proportion of titanium incorporation with two-step RTP has the best thermal stability for this structure.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Improvement of Thermal Stability of Nickel Silicide Using Co-sputtering of Ni and Ti for Nano-Scale CMOS Technology

Li¹,

Oh²,

Shin³

et al. 2013

JSTS:Journal of Semiconductor Technology and Science

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“…However, poor thermal stability is a main obstacle in the nano scale CMOSFET. Therefore, forming a NiSi film, with a uniform orientation in ultra shallow junctions, is still a big challenge [6,9].…”

Section: Introductionmentioning

confidence: 99%

Improvement of Thermal Stability of Ni-Silicide Using Vacuum Annealing on Boron Cluster Implanted Ultra Shallow Source/Drain for Nano-Scale CMOSFETs

Shin¹,

Oh²,

Kang³

et al. 2010

JSTS:Journal of Semiconductor Technology and Science

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Abstract-In this paper, Ni silicide is formed on boron cluster (B 18 H 22 ) implanted source/drains for shallow junctions of nano-scale CMOSFETs and its thermal stability is improved, using vacuum annealing. Although Ni silicide on B 18 H 22 implanted Si substrate exhibited greater sheet resistance than on the BF 2 implanted one, its thermal stability was greatly improved using vacuum annealing. Moreover, the boron depth profile, using vacuum post-silicidation annealing, showed a shallower junction than that using N 2 annealing.

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“…Ni and Co silicidation has been extensively studied for the application in complementary metal oxide semiconductor (CMOS) contacts. [18][19][20][21][22][23] The Ni silicidation starts at as low as 300…”

mentioning

confidence: 99%

A Study on the Electrodeposition and Silicidation of Nickel-Cobalt Alloys for Silicon Photovoltaic Cell Metallization

Huang¹

2015

ECS J. Solid State Sci. Technol.

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Metallization of silicon solar cells using electroplating is of interest recently as a cheaper replacement of silver screen printing. Light assisted electroplating of Nickel-Cobalt (NiCo) alloys were studied on crystalline silicon (Si) solar cells in this paper. The effect of illumination was investigated in conjunction with the light absorption properties of the plating solution, emission spectrum of the light source as well as the plating current. A solution dependent threshold light intensity was observed, beyond which the solar cells were under reverse bias during electroplating. The detailed compositional depth profiles of the silicide layer were studied along the silicidation reaction using microscopic energy dispersive X-ray spectrum (EDS). A significant improvement in the performance degradation at high temperature thermal stress was observed for solar cells metalized with the ternary silicide. The cost of solar energy compared with fossil fuel is one of the key determining parameters in its adoption by the market. Therefore, ways of saving the manufacturing cost of silicon solar cells are of great interest. The current manufacturing process involves a screenprinting process to metalize the front side with silver paste. While the screen-printing process has been integrated into the process flow with standard tooling, it typically suffers from conversion loss due to the low conductivity of the paste and low line height-width aspect ratio. In addition, the high price of silver potentially limits the cost reduction of the solar cell.Replacing the screen-printed Ag with electroplated high aspect ratio Cu grids has been proposed decades ago.1,2 This method has recently gained more attention due to the high price of Ag and the easy integration of Cu electroplating with laser patterning. The selective emitter formed by the in-situ doping during laser patterning 3-5 further eases the process control for metallization and has the potential to improve the conversion efficiency of the solar cell.Different Cu metallization schemes involving electroplating have been reported. [6][7][8][9][10][11][12][13][14][15][16][17] Most of these schemes involve the formation of Ni silicide either from electroless or electrolytic deposited Ni. [8][9][10][11][12][15][16][17] The electrolytic deposition process in these reports typically involves light, so called light induced or light assisted electrodeposition. The formation of silicide lowers the contact resistance between the metal and Si 18 and thus improves the solar cell performance. Ni and Co silicidation has been extensively studied for the application in complementary metal oxide semiconductor (CMOS) contacts.18-23 The Ni silicidation starts at as low as 300• C for metal rich phases, followed by monosilicide phases around 400• C and silicon rich phases above 800• C. 18 Co silicidation follows a similar phase evolution but at a higher temperature. 24 While the low resistive Co disilicide was originally used in CMOS it suffers from poor nucleation rate and interface roughne...

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NiSi salicide technology for scaled CMOS

Cited by 295 publications

References 12 publications

Improvement of Thermal Stability of Nickel Silicide Using Co-sputtering of Ni and Ti for Nano-Scale CMOS Technology

Improvement of Thermal Stability of Nickel Silicide Using Co-sputtering of Ni and Ti for Nano-Scale CMOS Technology

Improvement of Thermal Stability of Ni-Silicide Using Vacuum Annealing on Boron Cluster Implanted Ultra Shallow Source/Drain for Nano-Scale CMOSFETs

A Study on the Electrodeposition and Silicidation of Nickel-Cobalt Alloys for Silicon Photovoltaic Cell Metallization

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