Nickel silicides and germanides: Phases formation, kinetics and thermal expansion

Perrin, C.; Mangelinck, Dominique; Nemouchi, F.; Lábár, János L.; Lavoie, C.; Bergman, C.; Gas, P.

doi:10.1016/j.mseb.2008.09.042

Cited by 29 publications

(31 citation statements)

References 28 publications

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“…Transition metal (TM) germanides have attracted much attention in the high-speed complementary metal oxide semiconductor (CMOS) technology because of their low room-temperature resistivity, high thermal stability and good adherence to silicon substrates [1][2][3][4][5]. The germanides including Cu-Ge [1], Cr-Ge [2], Co-Ge [3], Ni-Ge [4] and Ti-Ge [5] have been considered recently in Ge-based CMOS to minimize the sheet resistance and to achieve low contact resistances on gate source and drain areas.…”

Section: Introductionmentioning

confidence: 99%

“…The germanides including Cu-Ge [1], Cr-Ge [2], Co-Ge [3], Ni-Ge [4] and Ti-Ge [5] have been considered recently in Ge-based CMOS to minimize the sheet resistance and to achieve low contact resistances on gate source and drain areas. Interface reactions between TM and Ge are critically important for the reliability of microelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

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Thermodynamic assessment of the Cu–Ge binary system

Wang

Jin

Leinenbach

et al. 2010

Journal of Alloys and Compounds

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Thermodynamic assessment of the Cu–Ge binary system

Wang

Jin

Leinenbach

et al. 2010

Journal of Alloys and Compounds

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“…6,11 The first phase to grow is Ni 5 Ge 3 , which is soon followed by the growth of NiGe as evidenced by the appearing set of diffraction peaks at 290…”

mentioning

confidence: 99%

Sn diffusion during Ni germanide growth on Ge1–xSnx

Demeulemeester¹,

Schrauwen²,

Nakatsuka³

et al. 2011

Applied Physics Letters

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We report on the redistribution of Sn during Ni germanide formation on Ge1–xSnx/〈Ge(100)〉 and its influence on the thin film growth and properties. These results show that the reaction involves the formation of Ni5Ge3 and NiGe. Sn redistributes homogenously in both phases, in which the Sn/Ge ratio retains the ratio of the as-deposited Ge1–xSnx film. Sn continues to diffuse after full NiGe formation and segregates in two regions: (1) at the interface between the germanide and Ge1–xSnx and (2) at the surface, which has major implications for the thin film and contact properties.

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“…Although in previous studies focus has been on the reactions of germanium with Pd [6,[14][15][16][17][18][19][20][21][22][23], Pt [6,13,22,[24][25][26][27][28][29], and Ni [6,9,11,[13][14][15][16]22,[28][29][30][31][32][33][34][35][36][37][38], so far there is very little literature on reactions of germanium with Ir [39]. Gaudet et al [6] carried out a systematic study of thermally induced reaction of 20 transition metals with Ge substrates.…”

Section: Introductionmentioning

confidence: 99%

“…Perrin et al [38] investigated the phase formation and growth kinetics for both Ni-Si and Ni-Ge systems. They have shown that the Ni-Si system has three major phases (Ni 2 Si, NiSi and NiSi 2 ) that grow sequentially while Ni-Ge system showed only two phases (Ni 5 Ge and NiGe) that grow simultaneously.…”

Section: Introductionmentioning

confidence: 99%

Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (100)

Chawanda

Coelho

Auret

et al. 2012

Journal of Alloys and Compounds

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Iridium (Ir) Schottky barrier diodes were deposited on bulk grown (100) Sbdoped n-type germanium by using the electron beam deposition system. Electrical characterization of these contacts using current-voltage (I-V) and capacitance-voltage (C-V) measurements was performed under various annealing conditions. The variation of the electrical properties of these Schottky diodes can be attributed to combined effects of interfacial reaction and phase transformation during the annealing process.Thermal stability of the Ir/n-Ge (100) was observed up to annealing temperature of 500 o C. Furthermore, structural characterization of these samples was performed by using a scanning electron microscopy (SEM) at different annealing temperatures.Results have also revealed that the onset temperature for agglomeration in a 20 nm Ir/n-Ge (100) system occurs between 600-700 o C.

show abstract

Nickel silicides and germanides: Phases formation, kinetics and thermal expansion

Cited by 29 publications

References 28 publications

Thermodynamic assessment of the Cu–Ge binary system

Thermodynamic assessment of the Cu–Ge binary system

Sn diffusion during Ni germanide growth on Ge1–xSnx

Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (100)

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