Nickel silicide formation using multiple-pulsed laser annealing

Abstract

The effect of multiple-pulsed laser irradiation on Ni silicide formation in Ni(Ti)∕Si system was studied. A layered structure consisting of both crystalline NiSi2 and Ni-rich Ni–Si amorphous phases with a protective TiOx overlayer was formed after five-pulsed laser annealing at 0.4Jcm−2. Different solidification velocities caused by a variation in the atomic concentration across the melt have led to the formation of this layered structure. On the other hand, by increasing the number of laser pulses, a continuous layer of polycrystalline NiSi was obtained after a 20-pulsed laser annealing at 0.3Jcm−2 laser fluence. Its formation is attributed to a better elemental mixing which occurred during subsequent pulses. Enhancement of surface absorption and remelting of the phases formed is proposed as the mechanism governing the continuous NiSi layer formation.

Failure Analysis of Damages on Advanced Technologies Induced by Picosecond Pulsed Laser During Space Radiation SEE Testing

“…In the attempt to separate these effects, the authors had conducted pulsed laser SEE tests without biasing of the device and still observed laser induced damages at relatively similar laser energies. In the absence of electric field, several other research groups [12][13][14] had already demonstrated that pulsed laser was capable of inducing annealing effects on nickel silicide layers. However, these were demonstrated via pulsed laser of much shorter wavelengths (or higher photon energy) which were less than 355 nm and longer pulse duration (10 to 150 ns) than the pulsed laser utilized in this paper.…”

Schottky barrier height modulation with Aluminum segregation and pulsed laser anneal: A route for contact resistance reduction

“…Rapid melting and resolidification process during PLA probably prevents redistribution of the atoms within the melt, hence resulting in a graded Ni-Si profile within the silicide. While Ni-rich silicide is formed at 300 mJ/cm 2 , transformation of Ni-rich silicide to low resistive NiSi is possible with longer dwell time [8] or multiple PLA [9].…”

Formation of Silicided Hyper-Shallow p+/n- Junctions by Pulsed Laser Annealing

“…This phenomenon creates a region with different melting points and hence some part of the film (Ni-rich Ni-Si layer) was rapidly solidified into glassy state, where the other (NiSi 2 layer) solidifies in a slower speed which then undergoes a liquid phase epitaxial regrowth taking a Si substrate as the template as in the case of NiSi 2 layer at the film/Si interface. Figure 17 The XTEM micrograph of the sample after (a) single-pulsed LA at 0.5 J/cm 2 and (b) 20 pulses LA at 0.3 J/cm 2 (36,37).…”

“…This observation signifies that a multiple-pulsed LA is capable to facilitate the silicide formation at even lower thermal budget. Figure 16 The XRD spectra of the Ni 1-x (Ti) x /Si sample after (a) single-pulsed and (b) 20 pulses LA at varying laser fluences (36,37).…”