Abstract:͑NH 4 ͒ 2 S x treatment was employed to enhance the efficiency of AlGaN metal-insulator-semiconductor ͑MIS͒ photodetectors ͑PDs͒ with a liquid phase deposited ͑LPD͒ SiO 2 layer. With ͑NH 4 ͒ 2 S x treatment, one can reduce the reverse leakage current of the PD by 2 orders of magnitude and enhance the effective Schottky barrier height from 0.77 to 0.86 eV. Also, the ͑NH 4 ͒ 2 S x treatment can also significantly reduce the interface state density, D it , at the AlGaN/LPD oxide interface. Photo-to-dark current r… Show more
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