Next generation Stanford TCAD-PISCES 2ET and SUPREM 007

Beebe, S.; Rotella, F.M.; Sahul, Z.H.; Yergeau, D.; McKenna, Gregory B.; So, L.; Yu, Zhiping; Wu, Kuo-Chen; Kan, Edwin C.; McVittie, J.P.; Dutton, R.W.

doi:10.1109/iedm.1994.383428

Cited by 8 publications

(5 citation statements)

References 4 publications

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“…which, given the electric potential V, determines eigenenergies E and eigenfunctions c from which the electron concentration can be obtained. In (2), h is the modified Planck's constant and m n is the effective mass of electrons. The transport of carriers in nanoscale DG devices is nearly ballistic [11], so, no scattering are included in the solution of (2).…”

Section: The Main Programmentioning

confidence: 99%

“…The transport of carriers in nanoscale DG devices is nearly ballistic [11], so, no scattering are included in the solution of (2). Equations (1) and (2) are coupled such that the solution of any one requires the result of the other; consequently, they are solved by iterative method until self-consistence is obtained.…”

Section: The Main Programmentioning

confidence: 99%

“…Several classical device simulators were developed for the simulation of conventional MOSFETs [1][2][3][4], but a few which take care of quantum effects in nanoscale devices have been found [5,6]. In this work, a two dimensional (2D) quantum-mechanical device simulation tool for nanoscale double-gate (DG) SOI MOSFETs was developed.…”

Section: Introductionmentioning

confidence: 99%

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FETMOSS: a software tool for 2D simulation of double‐gate MOSFET

Abdolkader

Fathi²,

Fikry

et al. 2006

Int J Numerical Modelling

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SUMMARYA software tool for the 2D simulation of double-gate SOI MOSFET is developed. The developed tool is working under MATLAB environment and is based on the numerical solution of Poisson and Schro¨dinger equations self-consistently to yield the potential, carrier concentrations, and current within the device. Compared to the already existing tools, the new tool uses finite elements method for the solution of Poisson equation, thus, the simulation of curved boundary structures becomes feasible. Another new feature of the tool is the use of transfer matrix method (TMM) in the solution of Schro¨dinger equation which was proven in a recent published paper that it gives more accurate results than the conventional finite difference method (FDM) when used in some regions of operation. According to the working conditions, the tool can toggle between FDM and TMM to satisfy the highest accuracy with the largest speed of simulation. The tool is named as FETMOSS (Finite Elements and Transfer matrix MOS Simulator).

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Section: The Main Programmentioning

confidence: 99%

Section: The Main Programmentioning

confidence: 99%

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FETMOSS: a software tool for 2D simulation of double‐gate MOSFET

Abdolkader

Fathi²,

Fikry

et al. 2006

Int J Numerical Modelling

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“…Several commercial tools, e.g., [9], [10], and university-developed simulators, e.g., [11], [12], have been successfully employed for device engineering applications. However, most of them were focused on silicon-based devices.…”

Section: Rf-device Simulatorsmentioning

confidence: 99%

“…The 2-D device simulator PISCES [11], developed at the Stanford University, incorporates modeling capabilities for GaAs and InP based devices. One of its many modifications G-PISCES from Gateway Modeling [13] has been extended by a full set of III-V models.…”

Section: Rf-device Simulatorsmentioning

confidence: 99%

Industrial application of heterostructure device simulation

Palankovski

Quay

Selberherr

2001

IEEE J. Solid-State Circuits

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We give an overview of the state-of-the-art of heterostructure RF-device simulation for industrial application based on III-V compound semiconductors. The work includes a detailed comparison of device simulators and current transport models to be used, and addresses critical modeling issues. Results from two-dimensional hydrodynamic simulations of heterojunction bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) with MINIMOS-NT are presented in good agreement with measured data. The simulation examples are chosen to demonstrate technologically important issues which can be addressed and solved by device simulation

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