Industrial application of heterostructure device simulation

Abstract

We give an overview of the state-of-the-art of heterostructure RF-device simulation for industrial application based on III-V compound semiconductors. The work includes a detailed comparison of device simulators and current transport models to be used, and addresses critical modeling issues. Results from two-dimensional hydrodynamic simulations of heterojunction bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) with MINIMOS-NT are presented in good agreement with measured data. The simulation examples are chosen to demonstrate technologically important issues which can be addressed and solved by device simulation

Simulation of visible and ultra-violet group-III nitride light emitting diodes

“…Suggested over a half century ago in [24], it is based on the older ionic transport model by Nernst and Plank. Still, up to now it represents the most reasonable compromise between the computational efficiency and the accuracy of the description of underlying physical phenomena for a great variety of semiconductor devices [25].…”

Field-Plate Optimization of AlGaN/GaN HEMTs

“…SIMULATION SETUP The physical models for GaN-based materials from [11] have been implemented in MINIMos-NT which is a suitable tool for analysis of heterostructure devices [12].…”

Two-dimensional modelling and simulation of hydrogenated amorphous silicon p+–n–n+ solar cell

“…Besides simulating the external current-voltage characteristics [17], it allows a detailed simulation of the physical behavior of the device in both steady-state [18] and in transient regime [19]. MEDICI also offers the advantage of hydrodynamic simulation capabilities and the rigorous approach to generation/recombination processes as well as for treating anisotropic properties [20]. A deeper insight into the effect of the material properties such as doping concentration, dangling bond density of states and free carrier mobilities, and structural properties such as different layers and layer thicknesses on device performance can be obtained by simulation.…”