FETMOSS: a software tool for 2D simulation of double‐gate MOSFET

Abstract

SUMMARYA software tool for the 2D simulation of double-gate SOI MOSFET is developed. The developed tool is working under MATLAB environment and is based on the numerical solution of Poisson and Schro¨dinger equations self-consistently to yield the potential, carrier concentrations, and current within the device. Compared to the already existing tools, the new tool uses finite elements method for the solution of Poisson equation, thus, the simulation of curved boundary structures becomes feasible. Another new feature of the tool is the use of transfer matrix method (TMM) in the solution of Schro¨dinger equation which was proven in a recent published paper that it gives more accurate results than the conventional finite difference method (FDM) when used in some regions of operation. According to the working conditions, the tool can toggle between FDM and TMM to satisfy the highest accuracy with the largest speed of simulation. The tool is named as FETMOSS (Finite Elements and Transfer matrix MOS Simulator).

A new approach for numerical simulation of quantum transport in double‐gate SOI

“…Nanoscale DG MOSFET numerical simulation is performed by the self-consistent solution of Poisson equation and Schrodinger equation [3,4]. Poisson equation is given as…”

“…The transport of carriers in the channel of a DG SOI (Figure 1) is controlled by two (top and bottom) gates. Numerical simulation of nanoscale DG SOI on the quantum level includes the solution of Poisson equation and Schrodinger equation self-consistently [3,4]. Usually, the numerical solution of Schrodinger equation in DG SOI is not implemented directly into two dimensions as this needs excessive computational burden; instead, it is solved by what is called mode-space representation [5].…”