Next generation 600V CSTBT&amp;#x2122; with an advanced fine pattern and a thin wafer process technologies

Honda, Shigeto; Haraguchi, Yuki; Narazaki, Atsushi; Terashima, Toshio; Terasaki, Yoshiaki

doi:10.1109/ispsd.2012.6229045

Cited by 19 publications

(6 citation statements)

References 4 publications

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“…A reduction in on-state voltage by the narrow mesa width has been experimentally verified [3]. A 40 % reduction of the mesa width has realized 80 % of on-state voltage compared to that of the latest [GBTs.…”

mentioning

confidence: 78%

Recent technical trends and future prospects of IGBTs and power MOSFETs

Ogura

2014

2014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE ASIA)

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In this paper, recent technical trends and future prospects of TGBTs and power MOSFETs is presented.Device technologies mainly for reducing power loss are discussed. This is because the reduction in power loss of these power devices is important for home and consumer appliances. Firstly, historical main road maps of these device technologies are introduced. Next, proposed future road maps and distinguishing results are also introduced. And, a comparison with TGBTs, power MOSFETs and SiCMOSFETs is discussed. Finally, T will conclude that Si power devices and SiC-power devices will coexist in home and consumer appliances by taking advantage of each characteristic in the near future.

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mentioning

confidence: 78%

Recent technical trends and future prospects of IGBTs and power MOSFETs

Ogura

2014

2014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE ASIA)

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“…The lower the rated voltage is, the thinner the wafer thickness is. The TWP approach started with 1200 V class devices from the process easiness point of view and currently has reached around 600 V [12][13][14][15][16] and 400 V classes [17]. Considering movements to larger diameter wafers for power devices, it is obvious that TWP is one of the key technologies.…”

Section: Improving Fundamental Trade-offmentioning

confidence: 99%

Multidirectional development of IGBTs and diodes: low loss and tough but gentle (user‐friendly) power devices

Honda

Minato

Shimizu

et al. 2019

IET Power Electronics

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From the power loss reduction and safety operation points of view, the direction of power device developments is simply one-way. However, from the application point of view, the direction is wide-ranging. There are a variety of requirements to be considered, such as switching waveforms, operational environments including not only the temperature range but also the combination of the humidity, the cosmic ray endurance, the package compactness and so on. In this study, several efforts are explained as the latest technologies.

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“…Through the intensive efforts to realize the advanced TWP technology, which includes material handling technologies in the various fabrication steps especially in the wafer probing as the electrical characterization step, mechanical stress-free processes and soft handling methods have been established. Now the 7th generation 600 V class IGBT is in the mass production phase, and its V CE(sat) -E off are improved as 30% [6,13], as shown in Figure 7.…”

Section: Igbt (Low and Medium Voltage Range)mentioning

confidence: 99%

“…As shown in Figure 4, the generation of device proceeds only at the moment when the fundamental tradeoff relationship between V on and E off shifts to the closer position from the origin of the graph. In our case, the generation of IGBT proceeds from the planar gate designed by a 3 micro-meter rule to the planar gate of the sub-micron design rule [2], further to the trench gate type [3,9] and CSTBT TM [4,5,7,8], to today's current generation of 600 V class known as the 7th IGBT [6,13] as the LPT type device, LPT type devices are explained in detail in a later part of this paper.…”

Section: Introductionmentioning

confidence: 99%

Future trend of Si power device

Minato

Sato

2014

IEICE Electron. Express

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As a FOM (Figure Of Merit), the power density of a power module has grown in an almost constant ratio for the past 20 years in the field of power electronics. This progress has been achieved by the joint development of power chips and a package. A combination of an IGBT (Insulated Gate Bipolor Transistor) and an FWD (Free Wheeling Diode) is the most frequent combination of power chips for a power module. The progress of both IGBT and diode is based not only upon the development of device structures but also upon the progress of the wafer process technology, which is derived from a LSI (Large Scale Integrated circuit) process and optimised for the power device. The package technology for power devices is uniquely developed for high reliability even for high power density application. This paper reports both the power chip and the package technologies up to the latest generation for the IGBT power module.

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Next generation 600V CSTBT™ with an advanced fine pattern and a thin wafer process technologies

Cited by 19 publications

References 4 publications

Recent technical trends and future prospects of IGBTs and power MOSFETs

Recent technical trends and future prospects of IGBTs and power MOSFETs

Multidirectional development of IGBTs and diodes: low loss and tough but gentle (user‐friendly) power devices

Future trend of Si power device

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