New technique to reconstruct effective 3D profile from tilt images of CD-SEM

Morokuma, Hidetoshi; Miyamoto, Atsushi; Tanaka, Maki; Kazui, Masato; Takane, Atsushi

doi:10.1117/12.536445

Cited by 15 publications

(15 citation statements)

References 3 publications

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“…The rounding feature of a line is usually represented quantitatively by the sidewall angle, the footing, and the corner indexes (as shown in Fig. ) in practice (Morokuma et al ., ). These two indexes can be defined based on the first derivative of the measured signal level, that is, the distances between peaks and outer zeroes of the first derivative are calculated as the feature indexes.…”

Section: Resultsmentioning

confidence: 97%

“…Tanaka et al . have developed a multiple parameter profile characterization algorithm (Shishido et al ., ; Tanaka et al ., ; Morokuma et al ., ) based on MC simulated and experimental results, which partitions the SEM image signal into the sidewall and footing based on the first deviation of the measured signal level. It applies to top‐down SEM images and no throughput loss will be incurred; it is shown to have a 3‐sigma accuracy of

\pm 0 . 9^{\circ}

for sidewall angle deviating by more than 2°.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Monte Carlo Simulation of CD‐SEM Images for Linewidth and Critical Dimension Metrology

Zhang

Ding

2012

Scanning

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In semiconductor industry, strict critical dimension control by using a critical dimension scanning electron microscope (CD-SEM) is an extremely urgent task in near-term years. A Monte Carlo simulation model for study of CD-SEM image has been established, which is based on using Mott's cross section for electron elastic scattering and the full Penn dielectric function formalism for electron inelastic scattering and the associated secondary electron (SE) production. In this work, a systematic calculation of CD-SEM line-scan profiles and 2D images of trapezoidal Si lines has been performed by taking into account different experimental factors including electron beam condition (primary energy, probe size), line geometry (width, height, foot/corner rounding, sidewall angle, and roughness), material properties, and SE signal detection. The influences of these factors to the critical dimension metrology are investigated, leading to build a future comprehensive model-based library.

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Section: Resultsmentioning

confidence: 97%

\pm 0 . 9^{\circ}

for sidewall angle deviating by more than 2°.…”

Section: Introductionmentioning

confidence: 99%

Monte Carlo Simulation of CD‐SEM Images for Linewidth and Critical Dimension Metrology

Zhang

Ding

2012

Scanning

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“…When the line/feature size is decreased to several tens nanometers, the bias due to the edge effect would become more obvious. A lot of works including both experimental study (Bunday et al, 2007;Choi et al, 2006;Jones et al, 2003;Kawada et al, 2003;Maeda et al, 2008;Matsumoto et al, 2006;Morokuma et al, 2004;Novikov et al, 2007;Rice et al, 2006;Shishido et al, 2002;Tanaka et al, 2003;Tanaka et al, 2004;Tanaka et al, 2005;Tanaka et al, 2007;Tanaka et al, 2008a;Tanaka et al, 2008b;Wang et al, 2007;Yamane & Hirano, 2005) and theoretical investigation (Abe et al, 2007;Babin et al, 2008a;Babin et al, 2008b;Bunday & Allgair, 2006;Dersch et al, 2005;Frase et al, 2007a;Frase et al, 2007b;Gorelikov et al, 2005;Villarrubia et al, 2004;Villarrubia et al, 2005a;Villarrubia et al, 2005b) with MC simulation methods have been done, aiming at accurate estimation of the CD values with CD-SEM. However, when the dimension decreases to tens nanometers most of the experiential methods, such as, the maximum derivative method, the regression to baseline method and the sigmoidal fit method, face different difficulties (ITRS, 2007;Villarrubia et al, 2005a).…”

Section: Simulation Of Cd-sem Images For Critical Dimension Nanometromentioning

confidence: 99%

“…A reasonable algorithm is urgently needed for the linewidth metrology of nanometer systems. Several algorithms (Bunday & Allgair, 2006;Frase et al, 2007a;Morokuma et al, 2004;Novikov et al, 2007;Shishido et al, 2002;Tanaka et al, 2003;Villarrubia et al, 2004;Villarrubia et al, 2005a;Villarrubia et al, 2005b) by MC methods for CD linewidth determination have been brought up to meet the limitation of the traditional experiential algorithms.…”

Section: Simulation Of Cd-sem Images For Critical Dimension Nanometromentioning

confidence: 99%

Monte Carlo Simulation of SEM and SAM Images

Li¹,

Mao²,

Ding³

2011

Applications of Monte Carlo Method in Science and Engineering

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“…3,4 The past two decades have also seen the prodigious rise of scatterometry or optical critical dimension (OCD) metrology for in-line process control. 5–7 Despite steadily increasing demands on the accuracy of the required models, both SEM and scatterometry continue to be widely utilized for process metrology.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of carbon nanotube probes in critical dimension atomic force microscopes

Choi

Park

Ahn

et al. 2016

J. Micro/Nanolith. MEMS MOEMS

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The decreasing size of semiconductor features and the increasing structural complexity of advanced devices have placed continuously greater demands on manufacturing metrology, arising both from the measurement challenges of smaller feature sizes and the growing requirement to characterize structures in more than just a single critical dimension. For scanning electron microscopy, this has resulted in increasing sophistication of imaging models. For critical dimension atomic force microscopes (CD-AFMs), this has resulted in the need for smaller and more complex tips. Carbon nanotube (CNT) tips have thus been the focus of much interest and effort by a number of researchers. However, there have been significant issues surrounding both the manufacture and use of CNT tips. Specifically, the growth or attachment of CNTs to AFM cantilevers has been a challenge to the fabrication of CNT tips, and the flexibility and resultant bending artifacts have presented challenges to using CNT tips. The Korea Research Institute for Standards and Science (KRISS) has invested considerable effort in the controlled fabrication of CNT tips and is collaborating with the National Institute of Standards and Technology on the application of CNT tips for CD-AFM. Progress by KRISS on the precise control of CNT orientation, length, and end modification, using manipulation and focused ion beam processes, has allowed us to implement ball-capped CNT tips and bent CNT tips for CD-AFM. Using two different generations of CD-AFM instruments, we have evaluated these tip types by imaging a line/space grating and a programmed line edge roughness specimen. We concluded that these CNTs are capable of scanning the profiles of these structures, including re-entrant sidewalls, but there remain important challenges to address. These challenges include tighter control of tip geometry and careful optimization of scan parameters and algorithms for using CNT tips.

show abstract

New technique to reconstruct effective 3D profile from tilt images of CD-SEM

Cited by 15 publications

References 3 publications

Monte Carlo Simulation of CD‐SEM Images for Linewidth and Critical Dimension Metrology

Monte Carlo Simulation of CD‐SEM Images for Linewidth and Critical Dimension Metrology

Monte Carlo Simulation of SEM and SAM Images

Evaluation of carbon nanotube probes in critical dimension atomic force microscopes

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