In this work, aimed primarily at providing more accurate electron inelastic mean free paths (IMFPs) and stopping powers (SPs) at low energies than are provided by the single pole approximation, the “full Penn” algorithm has been employed to derive the electron inelastic scattering energy loss function in solids. IMFPs and SPs have thus been calculated in the energy range from 1 eV to 10 keV and are in good agreement with the experimental data. This treatment of electron inelastic scattering combined with a consistent model for the cascade secondary electron generation has enabled more elaborate Monte Carlo simulations of secondary electron emission from metals. The calculated results of the energy distributions and the secondary electron emission yields for Al and Cu agree reasonably with experimental results.

Abstract.A database has been developed to study the evolution, the nonlinear effects on equilibria, and the disruptivity of locked and quasi-stationary modes with poloidal and toroidal mode numbers m = 2 and n = 1 at DIII-D. The analysis of 22,500 discharges shows that more than 18% of disruptions are due to locked or quasistationary modes with rotating precursors (not including born locked modes). A parameter formulated by the plasma internal inductance l i divided by the safety factor at 95% of the poloidal flux, q 95 , is found to exhibit predictive capability over whether a locked mode will cause a disruption or not, and does so up to hundreds of milliseconds before the disruption. Within 20 ms of the disruption, the shortest distance between the island separatrix and the unperturbed last closed flux surface, referred to as d edge , performs comparably to l i /q 95 in its ability to discriminate disruptive locked modes. Out of all parameters considered, d edge also correlates best with the duration of the locked mode. Disruptivity following a m/n = 2/1 locked mode as a function of the normalized beta, β N , is observed to peak at an intermediate value, and decrease for high values. The decrease is attributed to the correlation between β N and q 95 in the DIII-D operational space. Within 50 ms of a locked mode disruption, average behavior includes exponential growth of the n = 1 perturbed field, which might be due to the 2/1 locked mode. Surprisingly, even assuming the aforementioned 2/1 growth, disruptivity following a locked mode shows little dependence on island width up to 20 ms before the disruption. Separately, greater deceleration of the rotating precursor is observed when the wall torque is large. At locking, modes are often observed to align at a particular phase, which is likely related to a residual error field. Timescales associated with the mode evolution are also studied and dictate the response times necessary for disruption avoidance and mitigation. Observations of the evolution of β N during a locked mode, the effects of poloidal beta on the saturated width, and the reduction in Shafranov shift during locking are also presented.

In this paper, we have developed a Monte Carlo (MC) simulation method for calculation of scanning electron microscopy (SEM) images of rough surfaces. The roughness structure is constructed in a finite element triangulated mesh by using a Gaussian function to describe the distribution of amplitude of the random rough peaks. Further spatial subdividing can accelerate the calculation and improves MC simulation efficiency. The MC model is based on the using of the Mott cross section for description of the electron elastic scattering and the using of the full Penn algorithm in a dielectric functional approach to the electron inelastic scattering. This simulation relates directly a defined rough surface structure modeling described by exact values of roughness parameters to the contrast observed in a SEM image, enabling the investigation of the influence of line edge roughness to the critical dimension (CD) metrology of a metal-oxide-semiconductor device by SEM. Example calculation of line images with sidewall roughness demonstrates that the present MC simulation method is useful for CD metrology of nanostructures by CD-SEM and, especially, for the linewidth measurement in the integrated circuit industry.

A type of silicon detector known as AXUV (absolute extreme ultraviolet) photodiodes is successfully used to measure the radiated power in EAST. The detector is characterized by compact structure, fast temporal response (<0.5 s) and flat spectral sensitivity in the range from ultra-violet to X-ray. Two 16-channel AXUV arrays are installed in EAST to view the whole poloidal cross-section of plasma. Based on the diagnostic system, typical radiation distributions for both limiter and divertor plasma are obtained and compared. As divertor detachment occurs, the radiation distribution in X-point region is observed to vary distinctly. The total radiation power losses in discharges with different plasma parameters are briefly analyzed.