The present study has attempted to downscale a mass spectrometer in order to make it portable and enable onsite analysis with it. The development of a small mass spectrometer required the use of a compact pump whose displacement was small, decreasing the sensitivity of that spectrometer. To get high sensitivity with a small mass spectrometer, we have integrated novel techniques: a highly sensitive ionization source and efficient extraction of sample vapor. The low-pressure dielectric barrier discharge ionization (LP-DBDI) source made it possible to increase the conductance between the source and the mass analyzer, compared with ambient ionization sources, enhancing the efficiency of the ion transfer from the ionization source to the mass analyzer. We have also developed a vacuumed headspace method efficiently transporting the sample vapor to the ionization source. The sensitivity was further enhanced by also using a discontinuous sample gas introduction technique. A prototype portable mass spectrometer using those novel techniques was found to be sensitive enough to detect 0.1 ppm methamphetamine, 1 ppm amphetamine, 1 ppm 3,4-methylenedioxymethamphetamine, and 10 ppm cocaine in liquid.
This study presents a method of extracting three-dimensional metrological information for etched gate structures from top-down SEM images for use in critical dimension analysis. The variations in sidewall angle and bottom corner (footing) roundness are quantified as feature indices by multiple parameter profile characterization (MPPC), and are used as the main indicators of device performance. A stable algorithm developed based on simulation and experimental results partitions the SEM image signal into the sidewall and footing based on the first derivative of the image signal. The width of the sidewall is used as an index of the sidewall angle, and the width of the footing is used as an index of the footing roundness. The validity of the MPPC method is confirmed through experiments using actual poly-Si gate wafers, and is shown to have a 3σ accuracy of ±0.9º for sidewall angles deviating by more than 2º. The sidewall angle index and its distribution map are useful for evaluating the etching process, and are particularly effective for revealing subtle macro variations like asymmetry, while the footing roundness index is useful for screening out bad wafers. As MPPC employs only top-down SEM images, no throughput loss will be incurred in comparison with conventional CD measurements.
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