New Stabilization Technique to Prevent Parametric Oscillations in a 35 W C-Band Algan/Gan Mmic High Power Amplifier

Abstract

In this paper, a novel stabilization scheme to prevent parametric oscillations in power amplifiers is presented. Based on a new oscillation detection approach, the inductive degeneration technique was used, for the first time, to successfully stabilize a high-power amplifier and prevent parametric oscillations. A 0.15 µm AlGaN/GaN Microwave Monolithic Integrated Circuit high power amplifier operating at 5.8 GHz with 10% fractional bandwidth was designed and successfully stabilized using this approach. The proposed (4.7 × 3.7) mm 2 three-stage amplifier achieves a saturated output power of 35 W with 29% power added efficiency and a large-signal gain of 26 dB.

A Ku-Band GaN-on-Si MMIC Power Amplifier with an Asymmetrical Output Combiner

“…When designing an HPA, the appearance of oscillations related to circuit instabilities must be carefully avoided. Different types of oscillations can occur in microwave power amplifiers: low frequency or bias, even mode or small signal, odd mode and parametric [ 15 ].…”

E‐band low‐noise amplifier MMIC with impedance‐controllable filter using SiGe 130‐nm BiCMOS technology

“…For unconditionally stable operation, it was designed using the resistor‐capacitor (R‐C) pair composed of R 2 and C 3 in parallel, as displayed in Figure 1, and using the microstrip line L 5 as an inductor between the HBT emitter and ground [5–9]. L 5 also modifies the series inductive feedback so it is close the minimum noise point and the maximum available gain of the HBT to achieve more gain and lower noise figures in the LNA [10,11]. The matching and DC bias circuits of the LNA were designed with microstrip lines, metal‐insulator‐metal (MIM) capacitors, and a resistor.…”