New Solution to High-Field Transport in Semiconductors: II. Velocity Saturation and Ballistic Transmission

Natori, Kenji

doi:10.1143/jjap.48.034504

Cited by 21 publications

(12 citation statements)

References 27 publications

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“…The first region is next to the source, where the carrier energy is assumed to be smaller than the optical phonon energy and only elastic scattering occurs. The second region is next to the first, where the carrier has a larger energy than the optical phonon caused by the acceleration of the lateral electric field, and the inelastic scattering from the optical phonon decreases the carrier energy as shown in Figure 8 (20,21). The pseudo one-dimensional Boltzmann equation with a constant electric field is transformed into a pair of carrier flux equations.…”

Section: Potentialmentioning

confidence: 99%

(Invited) Si Nanowire Technology

Iwai

2013

ECS Trans.

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Recently, CMOS downsizing has been accelerated very aggressively in both production and research levels. However, it is still questionable if we can successfully introduce deep sub-10 nm CMOS LSIs into market, due to performance concerns -such as I on /I off ratio, current drive, variation in the electrical characteristics, concerns for the yield, reliability and manufacturing cost. We have conducted nano-CMOS studies in advance to provide possible solutions to the future expected problems. Si Nanowire FETs have been found to have very promising characteristics with high I on /I off ratio and high drive current which could give them a strong foothold in the near future device structures.

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Section: Potentialmentioning

confidence: 99%

(Invited) Si Nanowire Technology

Iwai

2013

ECS Trans.

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“…The first region is next to the source, where the carrier energy is assumed to be smaller than the optical phonon energy and only elastic scattering occurs. The second region is next to the first, where the carrier has a larger energy than the optical phonon caused by the acceleration of the lateral electric field, and the inelastic scattering from the optical phonon decreases the carrier energy as shown in Figure 8 [23,24]. The pseudo one-dimensional Boltzmann equation with a constant electric field is transformed into a pair of carrier flux equations.…”

Section: Modelingmentioning

confidence: 99%

Si nanowire FET and its modeling

Natori

Shiraishi

Iwata

et al. 2011

Sci. China Inf. Sci.

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Because of its ability to effectively suppress off-leakage current with its gate-around configuration, the Si nanowire FET is considered to be the ultimate structure for ultra-small CMOS devices to the extent that the devices would be approaching their downsized limits. Recently, several experimental studies of Si nanowire FETs with on-currents much larger than those of planar MOSFETs have been published. Consequently, Si nanowire FETs are now gaining significant attention as the most promising candidate for mainstream CMOS devices in the 2020s. To enable the introduction of the Si nanowire FETs into integrated circuits, good compact models, which circuit designers can easily handle, are essential. However, it is a very challenging task to establish such a compact model, because the I D − V D characteristics of Si nanowire FETs are affected by the band structure of the nanowire, which is very sensitive to the nanowire diameter, cross-sectional shape, crystal orientation, mechanical stress and interface states. In this paper, the recent status of research on Si nanowire FETs in experimental and theoretical studies is described.

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“…where,  S and  D =  S -qV D are Fermi levels of the source and the drain electrodes, respectively, and g i is the subband degeneracy. The expression of T i () was derived by embodying the transport model [3,4]…”

Section: Compact Modelmentioning

confidence: 99%

A Novel Compact-Model of Quasi-Ballistic Nanowire MOSFETs

Natori

2009

Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials

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New Solution to High-Field Transport in Semiconductors: II. Velocity Saturation and Ballistic Transmission

Cited by 21 publications

References 27 publications

(Invited) Si Nanowire Technology

(Invited) Si Nanowire Technology

Si nanowire FET and its modeling

A Novel Compact-Model of Quasi-Ballistic Nanowire MOSFETs

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