New self-controlled and self-protected IGBT based integrated switch

Capy, Florence; Laur, J.-P.; Breil, M.; Richardeau, Frédéric; Brunet, Magali; Imbernon, E.; Bourennane, Abdelhakim; Caramel, C.; Austin, Patrick; Sanchez, Jean-Louis

doi:10.1109/ispsd.2009.5158047

Cited by 5 publications

(3 citation statements)

References 7 publications

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“…In this case, CMOS compatibility of the processes employed to create the 3D capacitors should be ensured, as thermal budget from one component can create unwanted diffusion in the other component. As an example of compatibility and pooling of technological steps between active and passive components, our team at LAAS-CNRS published a study on how to integrate 3D capacitors with power devices on the same wafer using the functional integration concept [41]. In power conversion, for switches control, the realization of drivers autonomous in energy, requires a storage cell.…”

Section: ) Integration In Power Systems: On-chip (Soc) or In-packagementioning

confidence: 99%

High-Density 3-D Capacitors for Power Systems On-Chip: Evaluation of a Technology Based on Silicon Submicrometer Pore Arrays Formed by Electrochemical Etching

Brunet

Kleimann

2013

IEEE Trans. Power Electron.

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This paper presents the state of the art technologies currently used to produce high density integrated capacitors for power systems on-chip applications. The use of high-k dielectrics and 3D patterning of silicon for reaching high specific capacitance is reviewed. Integrating capacitors monolithically on the active chip or in package of power systems is discussed and solutions are proposed for minimising series resistance and achieving a high level of integration. A technology based on nanolithography and silicon electrochemical etching is then detailed. It is shown that capacitance densities of up to 700 nF/mm² can be obtained with a submicrometer pores array in a relatively limited thickness. The advantages and disadvantages of further decreasing the pore size to nanosize pores (below 100 nm) are discussed.

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Section: ) Integration In Power Systems: On-chip (Soc) or In-packagementioning

confidence: 99%

High-Density 3-D Capacitors for Power Systems On-Chip: Evaluation of a Technology Based on Silicon Submicrometer Pore Arrays Formed by Electrochemical Etching

Brunet

Kleimann

2013

IEEE Trans. Power Electron.

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“…The fabrication steps of the capacitor (from step a to step d) are CMOS compatible and can be accommodated in the process flow of power components, as demonstrated with MOSFETs in [29] for self power supply application. The magnetic shield and the microinductor are typical back-end processing steps.…”

Section: Fabrication Processmentioning

confidence: 99%

Integrated LC Filter on Silicon for DC–DC Converter Applications

Artillan¹,

Brunet²,

Bourrier³

et al. 2011

IEEE Trans. Power Electron.

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The integration of passive components on silicon for future DC-DC converters applications is still a challenging area of research. This paper reports the microfabrication of a fully integrated filter containing a spiral inductor on top of a 3D capacitor. A thin magnetic shielding layer is introduced between the two components demonstrating that losses caused by the inductor in the capacitor area are reduced, thus increasing the maximum working frequency of the whole component. The fabricated filter was characterized in a test circuit (buck-type converter).

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“…However, the Silicon platform still has numerous advantages, most significantly its availability, reliability and performances. The heterogeneous and monolithic integration within Silicon power transistors is still a great way to improve not only the transistor itself, but the whole power switch function in power converters [2], [3]. Although several integrated solutions for driver supplies or gate drivers are available, only a few solutions have been presented to date for the integration of the required isolation between the power switch and its external control driver [4], [5].…”

Section: Introductionmentioning

confidence: 99%

Integrated low power and high bandwidth optical isolator for monolithic power MOSFETs driver

Rouger

Crébier

Lesaint

2011

2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs

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Abstract-An integrated solution for the galvanic isolation between power transistors and their control unit is presented in this paper. This solution is based on a monolithic integration of a photodetector within a power MOSFET without any modification of its fabrication process. This photoreceiver can be associated with a monolithic driver to drive high side switches. Exhaustive characteristics for several integrated photodetectors are presented and discussed: quantum efficiency, step response, small signal analysis and sensitivity to the High Voltage MOSFET's Drain. The results of this analysis are photoreceivers with a Full Width at Half Maximum above 300MHz and a responsivity above 0.15A/W at a wavelength of 500nm. This leads to an integrated low power and high bandwidth optical isolation.

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New self-controlled and self-protected IGBT based integrated switch

Cited by 5 publications

References 7 publications

High-Density 3-D Capacitors for Power Systems On-Chip: Evaluation of a Technology Based on Silicon Submicrometer Pore Arrays Formed by Electrochemical Etching

High-Density 3-D Capacitors for Power Systems On-Chip: Evaluation of a Technology Based on Silicon Submicrometer Pore Arrays Formed by Electrochemical Etching

Integrated LC Filter on Silicon for DC–DC Converter Applications

Integrated low power and high bandwidth optical isolator for monolithic power MOSFETs driver

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