Integrated low power and high bandwidth optical isolator for monolithic power MOSFETs driver

Rouger, Nicolas; Crébier, Jean-Christophe; Lesaint, Olivier

doi:10.1109/ispsd.2011.5890864

Cited by 10 publications

(6 citation statements)

References 10 publications

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“…In this paper, the study focuses on a signal transmission function for IGBT gate driver. This function can be performed through technologies such as magnetic coreless transformer [2][3][4], printed circuit board (PCB) planar transformers, capacitive couplings [5], optical insulation system [6] or piezoelectric couplings [7]. Therefore as to justify the choice of planar transformers with classical technologies (PCB, alumina ceramics), we can compare the price of a photo-emitter-receiver to few centimetre square of PCB for instance.…”

Section: Introductionmentioning

confidence: 99%

Design methodology for optimising a high insulation voltage insulated gate bipolar transistor gate driver signal transmission function

Lefranc

Frey

2015

IET Power Electronics

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In this study, a design methodology for optimising a signal transmission function for high galvanic insulation (up to 30 kV) insulated gate bipolar transistor gate driver is proposed. The technology is based on a printed circuit board magnetic planar transformer with electronic circuits for excitation and reception. The objective of this study is to optimise the geometric elements of the transformer and its associated electronics devices with the help of a virtual prototyping tool. A bi-objective problem of the overall system that leads to a Pareto front is presented. Several Pareto fronts' results are obtained assuming different insulation layers thickness. The chosen transformer solution is justified and depends on the bi-objective functions and the galvanic insulation level of the system. Moreover, the experimental results are compared with the simulation results. Finally, the comparisons between experimental and simulation results are proposed to lead to a conclusion of this methodology.

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Section: Introductionmentioning

confidence: 99%

Design methodology for optimising a high insulation voltage insulated gate bipolar transistor gate driver signal transmission function

Lefranc

Frey

2015

IET Power Electronics

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“…1 b ), (iv) protections, and (v) buffer circuits. For low voltage applications, up to 10 kV, the galvanic insulation system can be performed through technologies such as ferrite core planar transformers [5], coreless transformer [8], optical insulation system [9], and piezoelectric coupling [10]. According to [11], the optical insulation devices such as optocoupler have limited range of operating temperature less than 100°C.…”

Section: Introductionmentioning

confidence: 99%

Design methodology for very high insulation voltage capabilities power transmission function for IGBT gate drivers based on a virtual prototyping tool

Lefranc

Frey

et al. 2017

IET Power Electronics

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For the operation of the semiconductor components in medium voltage converter or multilevel converter applications (where the DC bus voltage up to several ten kilovolts), their gate driver systems require very high galvanic insulation voltage capabilities. Hence, this study details a design methodology to optimise a power supply function for insulated gate bipolar transistor gate drivers with high insulated voltage capabilities. To achieve this, a dc-to-dc full-bridge series-series resonant converter with a high air gap pot core planar transformer is selected. This air gap length and the dielectric material define the high insulation voltage capability. The objective of the study is to optimise the geometric elements of the transformer and its associated electrical components in the proposed converter. Magnetic and electrostatic modellings are provided. Maximise the converter efficiency (η con) is the main objective of the proposed optimisation design. Thus, the optimisation results are proposed: the converter efficiency (η con) as function of converter output power (P out). Finally, to validate the authors' proposed methodology, the experimental results are compared with the simulation ones. Then, the results of an improved optimisation design are provided.

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“…This optical detector outputs a small photo generated current signal. This signal is then treated and amplified by a flip-chipped or a monolithically integrated transimpedance amplifier (TIA) and self supplied gate driver electronics, before finally feeding the power transistor gate [8]- [10]. A schematic view of the integrated sensor is shown in Figure 1.…”

Section: Introductionmentioning

confidence: 99%

“…THE IOD STRUCTURE AND ITS CONSEQUENT MEASUREMENT SPECIFICATIONS As shown in Figure 1, the Emitter-Base N+/P-junction is chosen for the optical-detector as previously explained in [9], [10]. In this particular connection, the emitter photo generated leakage current will serve as the input electrical signal for the VMOS gate control.…”

Section: Introductionmentioning

confidence: 99%

Performance measurements of an optical detector designed for monolithic integration with a power VDMOS

Vafaei

Crébier

Rouger

2013

2013 IEEE International Instrumentation and Measurement Technology Conference (I2MTC)

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This paper demonstrates an accurate measurement procedure to characterize the DC and AC performance of an optical detector designed for monolithic integration with a 600 V vertical power MOS transistor. The spectral quantum efficiency (QE) from 400 nm up to 1 µm wavelengths has been measured. A QE of 26% in the 450 nm -520 nm wavelength range was achieved. The developed setup and measurement procedures can be used for diced samples, packaged devices, and on-wafer probing (maximum size: 4" wafers); furthermore, it is equipped with temperature control. The integrated optical detectors (IOD) key phenomena have been investigated for a wide range of wavelengths and biasing conditions, both experimentally and numerically. Simulation results as well as experimental results are presented and compared.

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Integrated low power and high bandwidth optical isolator for monolithic power MOSFETs driver

Cited by 10 publications

References 10 publications

Design methodology for optimising a high insulation voltage insulated gate bipolar transistor gate driver signal transmission function

Design methodology for optimising a high insulation voltage insulated gate bipolar transistor gate driver signal transmission function

Design methodology for very high insulation voltage capabilities power transmission function for IGBT gate drivers based on a virtual prototyping tool

Performance measurements of an optical detector designed for monolithic integration with a power VDMOS

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