Performance measurements of an optical detector designed for monolithic integration with a power VDMOS

Abstract

This paper demonstrates an accurate measurement procedure to characterize the DC and AC performance of an optical detector designed for monolithic integration with a 600 V vertical power MOS transistor. The spectral quantum efficiency (QE) from 400 nm up to 1 µm wavelengths has been measured. A QE of 26% in the 450 nm -520 nm wavelength range was achieved. The developed setup and measurement procedures can be used for diced samples, packaged devices, and on-wafer probing (maximum size: 4" wafers); furthermore, it is equipped with temperature control. The integrated optical detectors (IOD) key phenomena have been investigated for a wide range of wavelengths and biasing conditions, both experimentally and numerically. Simulation results as well as experimental results are presented and compared.