Integrated LC Filter on Silicon for DC–DC Converter Applications

Artillan, Philippe; Brunet, Magali; Bourrier, David; Laur, J.-P.; Mauran, Nicolas; Bary, L.; Dilhan, Monique; Estibals, B.; Alonso, Corinne; Sanchez, J.L.

doi:10.1109/tpel.2010.2102776

Cited by 39 publications

(21 citation statements)

References 26 publications

(27 reference statements)

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“…For 3.7 V to 1.1 V ZVS power conversion with a current ripple ΔI L = 2 I O (boundary condition for ZVS), the inductor loss and efficiency of the TSECPI are compared with those of the previous reported monolithic approaches ([2], [6], [8], [9], [12]) as shown in Fig. 9.…”

Section: Resultsmentioning

confidence: 99%

“…For integrated inductors with electroplated magnetic cores, the main loss mechanism is hysteresis loss and eddy current loss in the core material [6][7][8]. For integrated on-chip coreless inductor, the substrate eddy current loss is the dominant factor for large AC resistance and in turn causing large AC loss [2,9]. Reducing these losses requires complicated core lamination process [10] or complex substrate treatment [11].…”

Section: Introductionmentioning

confidence: 99%

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A new embedded inductor for ZVS DC-DC converter applications

Fang

Peng

et al. 2012

2012 24th International Symposium on Power Semiconductor Devices and ICs

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In this paper, a new tapered silicon-embedded coreless power inductor is proposed and demonstrated. The width and depth for the different turns of the inductor are designed with different values to reduce the proximity effect. An 18.6 nH inductance and a peak Q factor of 12.1 are achieved at 23 MHz within a chip area of 0.8 mm 2 . The AC power loss of the inductor is reduced by a maximum of 56% using the novel design. The inductor shows a peak efficiency of 91% in ZVS conversion applications, and is the highest in monolithic ZVS DC-DC converters reported so far.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A new embedded inductor for ZVS DC-DC converter applications

Fang

Peng

et al. 2012

2012 24th International Symposium on Power Semiconductor Devices and ICs

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“…As the size and volume directly influence the motional resistance of the device, the efficiency of the micro-resonator based converter is low compared to the existing works on PT based converters. Recently, many low power converters have been reported utilizing on chip air-core [73], [74] or co-packaged microfabricated air-core/thin magnetic film core inductors [75]- [77], [78] as well as co-packaged inductors on ferrite substrates [79]. These miniature (on-chip) converters may also be used as power conditioning circuits for implantable devices.…”

Section: Device Characterization and Performance Analysismentioning

confidence: 99%

Contour-Mode Ring-Shaped AlN Microresonator on Si and Feasibility of Its Application in Series-Resonant Converter

Imtiaz

Khan

Walling

2015

IEEE Trans. Power Electron.

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Microelectromechanicalsystems (MEMS) resonators on Si have the potential to replace the discrete passive components in a power converter. The main intention of this paper is to present a ring-shaped aluminum nitride (AlN) piezoelectric micro-resonator that can be used as an energytransferring device to replace inductors/capacitors in low power resonant converters for biomedical applications. Finite element simulation results have been provided, showing the mode of vibration at resonant frequency. The zero voltage switching (ZVS) condition for a series resonant converter incorporating the proposed MEMS resonator has been presented analytically and verified through experiment. This ZVS condition can be found in terms of the equivalent circuit parameters of the resonator. To the knowledge of the authors, ZVS analysis based on the equivalent electrical circuit model of the thin piezoelectric film resonators has not yet been reported in the literature. A CMOS-compatible fabrication process has beenproposed and implemented. In addition, the fabricated devices have been characterized and experimental results are included in the paper. The first contour mode AlN MEMS resonator with moderately low resonant frequency and motional resistance is reported in this paper with measured resonant frequency and motional resistance of 87.28 MHz and 36.728 Ω respectively.

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“…The PCB material selected as the substrate material to integrate a high power-density converter is mainly because of its capability for high-volume production using standard lamination process. The use of wide-band gap power transistors switched at above 1 MHz with soft-switching topology is favorable to reduce the size of passive components and thus to make it possible to embed passives into PCB substrate [3], [4]. Two methods for fabrication of PCB embedded transformers have been reported in [5]- [7].…”

Section: Introductionmentioning

confidence: 99%

2 MHz high-density integrated power supply for gate driver in high-temperature applications

Perrin

Allard

Buttay

et al. 2016

2016 IEEE Applied Power Electronics Conference and Exposition (APEC)

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International audienceA PCB embedded transformer for harsh environment (i.e., ambient temperature above 200 • C) applications is presented and used in the design of a 2 MHz integrated power-supply prototype for gate driver. The main benefits of using this developed PCB embedding process are the capability to customize the air-gap for the flyback transformer and volume reduction for the converter. The easy modulation of the air-gap distance can be achieved using PCB material in specfic thickness. Moreover, the design of a coplanar-winding transformer structure with very low inter-winding capacitance needs a large winding area and raises the interest for the PCB integration approach. Two-machined ferrite pieces in UI shape were sandwiched into a multi-layer PCB laminate with multiple pressing processes. A converter prototype built with the PCB embedded transformer and other components (GaN transistors, gate driver and passives) mounted above it shows 72% of power efficiency. One thousand thermal cycles between −55 • C and 200 • C were performed on the PCB embedded transformer without observation of any major defects, such as delamination and cracking. The thermal reliability test validates the compatibility between the selected ferrite core and PCB materials as well as the feasibility of this developed transformer embedding method. A three-time volume reduction is achieved when comparing with a benchmark converter prototype using discrete transformer

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Integrated LC Filter on Silicon for DC–DC Converter Applications

Cited by 39 publications

References 26 publications

A new embedded inductor for ZVS DC-DC converter applications

A new embedded inductor for ZVS DC-DC converter applications

Contour-Mode Ring-Shaped AlN Microresonator on Si and Feasibility of Its Application in Series-Resonant Converter

2 MHz high-density integrated power supply for gate driver in high-temperature applications

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