New power device figure of merit for high-frequency applications

Kim, Il–Jung; Matsumoto, Shinichi; Sakai, T.; Yachi, Toshiaki

doi:10.1109/ispsd.1995.515055

Cited by 33 publications

(9 citation statements)

References 4 publications

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“…V 2 BR R on ) [6], materials such as GaN and SiC present comprehensive improvements in the breakdown voltage (V BR ) vs. on-resistance (R on ) tradeoff. Comparing other FOMs provide easy estimations of the relevant metrics (a) conduction and switching losses from the on-resistance × output capacitance product (R on × C oss ) [7] and (b) power density from 1 √ Q g R on A package R th [8] where A package is the package size and R th is the thermal resistance. The gate charge Q g represents the switching loss incurred by the charging and discharging cycles of the gate terminal.…”

mentioning

confidence: 99%

Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization

et al. 2021

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The vertical Gallium Nitride-on-Silicon (GaN-on-Si) trench metal-oxide-semiconductor field effect transistor (MOSFET) is a promising architecture for the development of efficient GaN-based power transistors on foreign substrates for power conversion applications. This work presents an overview of recent case studies, to discuss the most relevant challenges related to the development of reliable vertical GaN-on-Si trench MOSFETs. The focus lies on strategies to identify and tackle the most relevant reliability issues. First, we describe leakage and doping considerations, which must be considered to design vertical GaN-on-Si stacks with high breakdown voltage. Next, we describe gate design techniques to improve breakdown performance, through variation of dielectric composition coupled with optimization of the trench structure. Finally, we describe how to identify and compare trapping effects with the help of pulsed techniques, combined with light-assisted de-trapping analyses, in order to assess the dynamic performance of the devices.

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mentioning

confidence: 99%

Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization

et al. 2021

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“…As Company A's device is used in this experiment, it is the smallest. This product is tentatively named as "Efficiency Figure of merit" (EFOM), and is similar to the high-frequency figure-of-merit (BHFFOM [35] and NHFFOM [36]) of the device itself [37]. These indices in Refs.…”

Section: Theoretical Explanation Of Loss Minimum Conditionmentioning

confidence: 99%

“…These indices in Refs. [35][36][37] were used to evaluate the high-frequency characteristics of the device alone; however, because the discussion here is concerning increase of the maximum efficiency of the system, there is a difference between the efficiency of the device alone (EFOM) and the system, in which the total system conduction resistance r onall should be used as an evaluation of efficiency instead of the device on-state resistance.…”

Section: Theoretical Explanation Of Loss Minimum Conditionmentioning

confidence: 99%

Survey of 99.9% Class Efficiency DC‐AC Power Conversion and Technical Issues

Kawamura

Miguchi

Setiadi

et al. 2022

IEEJ Transactions Elec Engng

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This study provides a survey overview of the literatures with the goal of maximizing the efficiency of DC-AC power conversion from an engineering science perspective. With the advent of wide band gap power semiconductors, the published literature on realizing high efficiency DC-AC converters has increased. Therefore, a literature survey of high-efficiency DC-AC inverters was first conducted. We demonstrated the importance of the measurement accuracy in measuring high efficiency losses, and then presented the literature on new measurement methods, as well as examples of analysis of the breakdown of these losses. Furthermore, we reviewed the literature on high-efficiency inverters. We presented measurement data (99.83%) on an inverter with a high efficiency energy conversion system circuit topology using Silicon Carbide (SiC) and Gallium Nitride (GaN) devices to demonstrate how the procedure was used to achieve loss minimization. We summarized the challenges hindering high efficiency.

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“…FOMs are used to compare materials/technologies and define their theoretical boundaries/ limitations. Some of these FOMs are important in the power electronics field in order to compare fairly devices and have a good indication of their performances [82][83][84][85][86][87]. These FOMs will be discussed herein, bringing insights for power electronics engineers about which characteristics should be taken into account when selecting active switches for project implementation.…”

Section: Comparison Between Gan and Si Semiconductorsmentioning

confidence: 99%

“…Proposed in [83], the FOM presented in (3) gives a good indication about the switching and conduction losses, since the energy stored at the output capacitance C oss is dissipated at the channel of the device in hard-switching applications (modeling switching losses), and the on-resistance R ds−on represents the conduction losses. Analyzing the data in Table 2, GaN devices present a better FOM and are a viable alternative for hard-switching applications with lower switching losses.…”

Section: Comparison Between Gan and Si Semiconductorsmentioning

confidence: 99%

Gallium-Nitride Semiconductor Technology and Its Practical Design Challenges in Power Electronics Applications: An Overview

et al. 2019

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This paper will revise, experimentally investigate, and discuss the main application challenges related to gallium nitride power semiconductors in switch-mode power converters. Gallium Nitride (GaN) devices are inherently gaining space in the market. Due to its high switching speed and operational switching frequency, challenges related to the circuit design procedure, passive component selection, thermal management, and experimental testing are currently faced by power electronics engineers. Therefore, the focus of this paper is on low-voltage (<650 V) devices that are used to assemble DC-DC and/or DC-AC converters to, for instance, interconnect PV generation systems in the DC and/or AC grids. The current subjects will be discussed herein: GaN device structure, the advantages and disadvantages of each lateral gallium nitride technology available, design challenges related to electrical layout and thermal management, overvoltages and its implications in the driver signal, and finally, a comprehensive comparison between GaN and Si technology considering the main parameters to increase the converters efficiency.

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New power device figure of merit for high-frequency applications

Cited by 33 publications

References 4 publications

Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization

Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization

Survey of 99.9% Class Efficiency DC‐AC Power Conversion and Technical Issues

Gallium-Nitride Semiconductor Technology and Its Practical Design Challenges in Power Electronics Applications: An Overview

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