New patterning process based on electron beam and optical lithography for high-Tc superconducting devices

Tsurukiri, E.; Tsukamoto, Akira; Soutome, Y.; Fukazawa, T.; Takagi, Kazuya; Saitoh, Kenji; Kurosawa, I.

doi:10.1016/s0921-4534(03)01194-8

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“…In figure 11(a) the resist profiles after development are presented in the case of a high resolution resist trench over the YBCO/STO substrate and are similar to those for the layout used for the study of superconducting properties of an YBCO bridge [35]. The first resist profile shown refers to the case of an isolated bridge and the rest of the profiles come from layouts with additional rectangular structures.…”

Section: Lithographic Results and Simulationmentioning

confidence: 99%

Electron beam lithography simulation for sub-quarter-micron patterns on superconducting substrates

Olzierski

Vutova

Mladenov

et al. 2004

Supercond. Sci. Technol.

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High temperature superconducting (HTS) devices offer significant performance (higher signal to noise ratio, sensitivity etc) improvement over conventional devices, becoming more prominent when device dimensions are scaled down. A typical technology for the fabrication of devices with very small critical dimensions is electron beam lithography. In the current work, a detailed study of the electron beam lithography process is presented using two simulation methods: one based on Monte Carlo simulation and one based on the Boltzmann transport equation. Simulation energy deposition results are compared with experimental ones in the case of Si and superconducting substrates for the first time, with satisfactory agreement found. The experimental data for statistical distributions of the scattered electrons were calculated in the case of an epoxy based chemically amplified resist film deposited on Si and on Y Ba2Cu3O7−δ/SrTiO3. The substrate strongly influences the distribution of the backscattered electrons due to the different effective atomic number and the mass densities of the substrate and YBCO layer are studied. It is shown that the decrease of the effective atomic numbers of the substrates (MgO and SrTiO3 in comparison with YBCO) leads to an increase in the external proximity effect obtained in regions far from the point of beam incidence on the resist (2 µm for 25 keV and 10–11 µm for 75 keV in the case of MgO). On MgO and SrTiO3 substrates the proximity effect is lower than on YBCO substrate (bulk YBCO) in regions near to the point of beam incidence. Using simulation tools, accurate prediction of final resist profiles (after development) over a wide exposure dose range of dense sub-quarter-micron structures is performed for both Si and superconducting substrates.

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Section: Lithographic Results and Simulationmentioning

confidence: 99%