New microwave techniques in surface recombination and lifetime studies

Jacobs, H.; Brand, F.A.; Meindl, J.D.; Weitz, S.; Benjamin, R.; Holmes, D. A.

doi:10.1109/proc.1963.2205

Cited by 15 publications

(2 citation statements)

References 9 publications

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“…Sandiford estimated the lifetime from current-voltage characteristics of p-n junctions in temperature range above room temperature and attributed the observed temperature dependence to change in the capture cross sections with temperature.3 Jacobs et al measured the lifetime in high-resistivity Si by the microwave photoconductivity decay (p.-PCD) method. 4 They interpreted the results on the basis of the SE theory, and the energy levels were estimated to be 0.065 eV for the bulk recombination center and 0.14 eV for the surface recombination center. These values are considerably smaller than our values, i.e., 0.12-0.14 eV for the bulk and >0.22 eV for the surface.…”

Section: Resultsmentioning

confidence: 99%

Temperature Dependence of Carrier Recombination Lifetime in Si Wafers

Ichimura

Tajiri

Ito

et al. 1998

J. Electrochem. Soc.

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The temperature dependence of carrier recombination lifetime for n-and p-type Si wafers is measured by the photoconductivity decay method in a temperature range between room temperature and about 90 K. The carrier lifetime of as-polished wafers has very weak temperature dependence, while the carrier lifetime decreases steeply with decreasing temperature f or oxidized wafers. For all samples, a slow component appears in the photoconductivity decay curves after an initial fast decay at temperatures below 150 K. From a numerical simulation, we conclude that the decrease in the carrier lifetime with decreasing temperature is due to recombination through shallow recombination centers with an energy level within 0.15 eV from the bandedge, and that the slow component is due to minority carrier traps with a small majority carrier capture cross section.

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Section: Resultsmentioning

confidence: 99%

Temperature Dependence of Carrier Recombination Lifetime in Si Wafers

Ichimura

Tajiri

Ito

et al. 1998

J. Electrochem. Soc.

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“…Non-contact measurements capable of accurately describing the behavior of carrier lifetime in semiconductors using the transmission of microwaves through a sample were first reported in 1959 [7]. Shortly afterwards, several articles reported the ability of a microwave reflectance techniques capable of accomplishing the same goals in 1962-1963 [8][9][10].…”

Section: Microwave Detected Lifetime Measurementsmentioning

confidence: 99%

Microwave Instrumentation and Sensing Techniques for Quantum Efficiency and Minority-Carrier Lifetime Measurements

Lu¹

2000

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A non-contact method characterizing the quantum efficiency of a solar cell using the microwave reflectance signature is presented in this thesis. Traditional solar cell quantum efficiency (QE) measurements are only possible near the completion of the fabrication process using contacts in direct physical connection with the metalized surface tabs to probe and extract charge carriers from the device. However, pressure within the solar metrology industry to report the spectral performance of the device earlier in the manufacturing process as part of the process control loop requires that a new non-contact method be developed. This thesis work contributes the development of a non-contact focused microwave reflectance technique capable of acquiring the full 365nm-1100nm spectrum in under 1 minute. Unlike many similar Time Resolved Microwave Conductivity (TRMC) and Microwave Photoconductivity Decay (µP CD) systems based on the open-ended waveguide technique, this measurement is developed to perform measurements in the far-field. As such, a different mechanism for understanding the problem is presented using the modulated scatterer concept from antenna theory. Using a combination of high dielectric sensor pads and negative-index of refraction microwave lenses, we are able to tune the far-field field probe size from 5mm-150mm allowing for high speed single point in-line measurements or high spatial sensitivity laboratory measurements. i This thesis work contributes the development of a non-contact quantum efficiency measurement technique using the far-field microwave reflectance sig

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Microwave (Photo)Electrochemistry

Tributsch¹

2002

Modern Aspects of Electrochemistry

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New microwave techniques in surface recombination and lifetime studies

Cited by 15 publications

References 9 publications

Temperature Dependence of Carrier Recombination Lifetime in Si Wafers

Temperature Dependence of Carrier Recombination Lifetime in Si Wafers

Microwave Instrumentation and Sensing Techniques for Quantum Efficiency and Minority-Carrier Lifetime Measurements

Microwave (Photo)Electrochemistry

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