New methodologies of NBTI characterization eliminating recovery effects

Denais, M.; Huard, V.; Parthasarathy, C.; Ribes, G.; Perrier, F.; Revil, N.; Bravaix, A.

doi:10.1109/essder.2004.1356540

Cited by 14 publications

(9 citation statements)

References 5 publications

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“…Grain boundary trap‐state generation and V th negative shift during NBTI on glass substrate is explained well with the established NBTI degradation phenomenon 14,15 . Also, grain boundary trap‐state reduction and V th positive shift during NBTI can be explained with the established phenomenon such as NBTI recovery and hydrogen diffusion from PI substrate 18,19 . V th positive shift during NBTI is reported, and it is known to be related to hole detrapping from the gate oxide to the channel under a lower applied gate voltage, resulting in the repassivation or annihilation in trap states with hydrogen, which is called as NBTI recovery 18,19 .…”

Section: Resultssupporting

confidence: 67%

“…Also, grain boundary trap‐state reduction and V th positive shift during NBTI can be explained with the established phenomenon such as NBTI recovery and hydrogen diffusion from PI substrate 18,19 . V th positive shift during NBTI is reported, and it is known to be related to hole detrapping from the gate oxide to the channel under a lower applied gate voltage, resulting in the repassivation or annihilation in trap states with hydrogen, which is called as NBTI recovery 18,19 . On the other hand, it is reported that moisture and/or hydrogen diffuse from the PI substrates to the channel and might be decreased with the insertion of a high density of barrier layer 5–7 .…”

Section: Resultsmentioning

confidence: 87%

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Alleviation of abnormal NBTI phenomenon in LTPS TFTs on polyimide substrate for flexible AMOLED

Lee

Kang

et al. 2020

J Soc Info Display

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This letter investigates the negative-bias temperature instability (NBTI) behavior of p-channel low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs) on plastic substrate. The measurements reveal that the thresholdvoltage positive shift is highly correlated to the passivation of grain boundary trap states. By applying the established phenomenon such as NBTI recovery and H diffusion from PI substrate, a new model is introduced to explain the mechanism and verified by the experiment. With the thick buffer and bottom metal layer or newly processed PI substrate, we succeeded in adjusting the NBTI behavior of LTPS TFTs on plastic substrate. K E Y W O R D S flexible AMOLED, grain boundary trap state, interface trap state, LTPS TFTs, negative-bias temperature instability (NBTI)

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Section: Resultssupporting

confidence: 67%

Section: Resultsmentioning

confidence: 87%

Alleviation of abnormal NBTI phenomenon in LTPS TFTs on polyimide substrate for flexible AMOLED

Lee

Kang

et al. 2020

J Soc Info Display

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“…First, we have shown that the methodology has been pointed out to have serious effects on measurement and to warp NBTI characterizations. New methodologies have been further proposed [28] and improved [29] to avoid recovery phenomena. Monitoring the generation of interface traps and the growth of oxide trapped charges during stresses, we have pointed out net differences between these two charge contributions.…”

Section: Discussionmentioning

confidence: 99%

Interface Trap Generation and Hole Trapping Under NBTI and PBTI in Advanced CMOS Technology With a 2-nm Gate Oxide

Denais

Huard

Parthasarathy

et al. 2004

IEEE Trans. Device Mater. Relib.

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110

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This paper gives an insight into the degradation mechanisms during negative and positive bias temperature instabilities in advanced CMOS technology with a 2-nm gate oxide. We focus on generated interface traps and oxide traps to distinguish their dependencies and effects on usual transistor parameters. negative bias temperature instability (NBTI) and positive bias temperature instability in both NMOS and PMOS have been compared and a possible explanation for all configurations has been suggested. Recovery and temperature effect under NBTI were also investigated showing different behaviors of the two components.Index Terms-CMOS, interface traps, negative bias temperature instability (NBTI), NMOS, oxide traps, positive bias temperature instability (PBTI), PMOS, recovery, reliability, threshold voltage.

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“…One can find today in the literature two major models to explain these relaxation phenomena. First, M.Denais et al conclude that the re-passivation of interface states (Nit) is negligible compared to oxide charge (Not) de-trapping [1]- [2]. On the contrary, other researchers [3][4][5][6][7], as Mahapatra et al, think that the relaxation is a consequence of the hydrogen species diffusion and interface states re-passivation.…”

Section: Introductionmentioning

confidence: 95%

“…For many years now, the reliability of advanced Pchannel MOSFETs is facing a real challenge due to the NBTI degradation (Negative Bias Temperature Instability) [1][2][3][4][5][6][7][8][9]. This phenomenon is still not well understood, especially the various relaxation effects occurring during and after the gate voltage stress.…”

Section: Introductionmentioning

confidence: 99%

Defects and relaxation during the negative bias temperature instability in PMOSFET

Bénard¹,

Ogier²,

Goguenheim

2008

2008 26th International Conference on Microelectronics

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In this paper, several experiments are presented in order to give a complete understanding of relaxation phenomena occurring during Negative Bias Temperature Instabilities (NBTI) stress in PMOSFETs. The impact of electrical field and temperature has been investigated. Firstly, we have proved the impact of the electrical field on de-trapping of oxide traps only, and not on the re-passivation of interface states. Secondly the temperature effects on interface states have been evaluated. Finally, we observe a full relaxation by combining field and high temperature effects. This study allows concluding on relaxation physics due to a NBTI interruption.

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New methodologies of NBTI characterization eliminating recovery effects

Cited by 14 publications

References 5 publications

Alleviation of abnormal NBTI phenomenon in LTPS TFTs on polyimide substrate for flexible AMOLED

Alleviation of abnormal NBTI phenomenon in LTPS TFTs on polyimide substrate for flexible AMOLED

Interface Trap Generation and Hole Trapping Under NBTI and PBTI in Advanced CMOS Technology With a 2-nm Gate Oxide

Defects and relaxation during the negative bias temperature instability in PMOSFET

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