New mechanism of plasma induced damage on CMOS image sensor: Analysis and process optimization

Carrere, J.-P.; Oddou, J.-P; Place, S.; Richard, C.; Benoît, Daniel; Jenny, C.; Gatefait, Maxime; Aumont, C.; Tournier, Arnaud; Roy, F.

doi:10.1016/j.sse.2011.06.037

Cited by 18 publications

(5 citation statements)

References 14 publications

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“…The memory characteristics, including the program/erase speed, charge retention, and endurance, were significantly improved by the incorporation of fluorine atoms, resulting in a built-in electric field in the Gd 2 O 3 nanostructure. However, defects are inevitably introduced into the dielectric matrix when a plasma is applied, owing to plasma damage resulting from energetic ion bombardment and ultraviolet (UV) irradiation [25][26][27]. This damage may counterbalance the passivation effect because of additional defects induced by the plasma.…”

Section: Introductionmentioning

confidence: 99%

Tunable bandgap energy of fluorinated nanocrystals for flash memory applications produced by low-damage plasma treatment

Huang¹,

Lin²,

Wang³

et al. 2012

Nanotechnology

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A plasma system with a complementary filter to shield samples from damage during tetrafluoromethane (CF(4)) plasma treatment was proposed in order to incorporate fluorine atoms into gadolinium oxide nanocrystals (Gd(2)O(3)-NCs) for flash memory applications. X-ray photoelectron spectroscopy confirmed that fluorine atoms were successfully introduced into the Gd(2)O(3)-NCs despite the use of a filter in the plasma-enhanced chemical vapour deposition system to shield against several potentially damaging species. The number of incorporated fluorine atoms can be controlled by varying the treatment time. The optimized memory window of the resulting flash memory devices was twice that of devices treated by a filterless system because more fluorine atoms were incorporated into the Gd(2)O(3)-NCs film with very little damage. This enlarged the bandgap energy from 5.48 to 6.83 eV, as observed by ultraviolet absorption measurements. This bandgap expansion can provide a large built-in electric field that allows more charges to be stored in the Gd(2)O(3)-NCs. The maximum improvement in the retention characteristic was >60%. Because plasma damage during treatment is minimal, maximum fluorination can be achieved. The concept of simply adding a filter to a plasma system to prevent plasma damage exhibits great promise for functionalization or modification of nanomaterials for advanced nanoelectronics while introducing minimal defects.

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Section: Introductionmentioning

confidence: 99%

Tunable bandgap energy of fluorinated nanocrystals for flash memory applications produced by low-damage plasma treatment

Huang¹,

Lin²,

Wang³

et al. 2012

Nanotechnology

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“…IC design rules include considerations to mitigate damage to gate oxides by antenna effects (charging during plasmabased processing) [67], [68]. Post-processing steps that employ plasma can cause similar damage, which can be avoided by depositing a metal layer beforehand to electrically short all the exposed CMOS connections.…”

Section: Damage To Circuits During Post-processingmentioning

confidence: 99%

System-on-Chip Considerations for Heterogeneous Integration of CMOS and Fluidic Bio-Interfaces

Datta-Chaudhuri

Smela

Abshire

2016

IEEE Trans. Biomed. Circuits Syst.

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Abstract-CMOS chips are increasingly used for direct sensing and interfacing with fluidic and biological systems. While many biosensing systems have successfully combined CMOS chips for readout and signal processing with passive sensing arrays, systems that co-locate sensing with active circuits on a single chip offer significant advantages in size and performance but increase the complexity of multi-domain design and heterogeneous integration. This emerging class of lab-on-CMOS systems also poses distinct and vexing technical challenges that arise from the disparate requirements of biosensors and integrated circuits (ICs). Modeling these systems must address not only circuit design, but also the behavior of biological components on the surface of the IC and any physical structures. Existing tools do not support the cross-domain simulation of heterogeneous lab-on-CMOS systems, so we recommend a two-step modeling approach: using circuit simulation to inform physics-based simulation, and vice versa. We review the primary lab-on-CMOS implementation challenges and discuss practical approaches to overcome them. Issues include new versions of classical challenges in system-on-chip integration, such as thermal effects, floor-planning, and signal coupling, as well as new challenges that are specifically attributable to biological and fluidic domains, such as electrochemical effects, non-standard packaging, surface treatments, sterilization, microfabrication of surface structures, and microfluidic integration. We describe these concerns as they arise in lab-on-CMOS systems and discuss solutions that have been experimentally demonstrated.Index Terms-Biosensor, heterogeneous integration, lab-on-achip, lab-on-CMOS, microfluidics, system on a chip.

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“…In modern process technologies, PID is believed to significantly impact the performance of MOSFETs and other devices such as memory, 48,49) image sensor, 50,51) power device, 52,53) and optical device. 54) Approaches for suppressing PID in the field of plasma design should be carried out in combination with device and circuit designs, since higher performance is required with low ULSI chip cost and a rapid time-to-market.…”

Section: Introductionmentioning

confidence: 99%

Defect generation in electronic devices under plasma exposure: Plasma-induced damage

Eriguchi

2017

Jpn. J. Appl. Phys.

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The increasing demand for higher performance of ULSI circuits requires aggressive shrinkage of device feature sizes in accordance with Moore's law. Plasma processing plays an important role in achieving fine patterns with anisotropic features in metal-oxide-semiconductor field-effect transistors (MOSFETs). This article comprehensively addresses the negative aspect of plasma processingplasma-induced damage (PID). PID naturally not only modifies the surface morphology of materials but also degrades the performance and reliability of MOSFETs as a result of defect generation in the materials. Three key mechanisms of PID, i.e., physical, electrical, and photon-irradiation interactions, are overviewed in terms of modeling, characterization techniques, and experimental evidence reported so far. In addition, some of the emerging topicscontrol of parameter variability in ULSI circuits caused by PID and recovery of PIDare discussed as future perspectives.

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New mechanism of plasma induced damage on CMOS image sensor: Analysis and process optimization

Cited by 18 publications

References 14 publications

Tunable bandgap energy of fluorinated nanocrystals for flash memory applications produced by low-damage plasma treatment

Tunable bandgap energy of fluorinated nanocrystals for flash memory applications produced by low-damage plasma treatment

System-on-Chip Considerations for Heterogeneous Integration of CMOS and Fluidic Bio-Interfaces

Defect generation in electronic devices under plasma exposure: Plasma-induced damage

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