New Low-Temperature Processing of Metalorganic Chemical Vapor Deposition-Bi₄Ti₃O₁₂ Thin Films Using BiO_x Buffer Layer

Abstract

Dynamics of the nonlocality measured by the violation of Svetlichny's Bell-type inequality is investigated in the non-Markovian model. The phenomenon of nonlocality sudden birth for the atoms and the reservoirs is obtained. The evolution of the nonlocality among the atoms or the reservoirs depends on the choice of the atom detuning from the cavity pseudomode, the cavity pseudomode decay and the rotation angles. For the small pseudomode decay in the near-resonance regime, the initial atomic nonlocality is completely transferred to the reservoirs ultimately.

Polarization switching behavior of Hf–Zr–O ferroelectric ultrathin films studied through coercive field characteristics

“…E C decreases with increasing thickness. This behavior is [52][53][54] and Bi 4 Ti 3 O 12 , [55][56][57][58][59][60][61] and HfO 2 9,12) and our results.…”

Epitaxial growth of ferroelectric oxide films

“…BiO x buffer layers were used to control the composition of BiT films with MO-CVD. By comparing BiT films deposited on buffered Pt/Si and pure Pt/Si substrates, Kijima et al [200] showed that with a BiO x buffer layer the Bi/Ti ratio in the films is higher than without a buffer layer. The BiO x buffer layer seemed to be absorbed by the BiT layer due to a solidstate reaction during growth and can then supply Bi atoms to compensate for Bi loss during growth.…”

Crystallization of bismuth titanate and bismuth silicate grown as thin films by atomic layer deposition

“…Crystallization could also be incomplete and then amorphous material is present along the crystalline phase [30]. For example, crystallization of Bi 4 Ti 3 O 12 thin films has been studied by varying the stoichiometry of the CVD-deposited films.…”